Iodine Solid Source Inductively Coupled Plasma Etching of InP

Akihiro MATSUTANI; Hideo OHTSUKI; Fumio KOYAMA

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Iodine Solid Source Inductively Coupled Plasma Etching of InP

机译：InP的碘固体源电感耦合等离子体刻蚀

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摘要

We have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using solid iodine as a gas source at a low process temperature of 90℃. We prepared a solid iodine crystal in the ICP etching chamber as the etching gas source. Iodine gas was supplied from the solid source at a high vapor pressure into the process chamber. Vertical and smooth etching was realized under the condition of low temperature and low power. The typical etching rate was 0.4 μm/min. We believe that solid I_2-ICP etching is a very simple and useful process for InP-based device fabrication with a resist mask.

机译：我们已经证明了在90℃的低工艺温度下使用固态碘作为气源对InP进行垂直和平滑的电感耦合等离子体（ICP）干法蚀刻。我们在ICP蚀刻室内准备了固态碘晶体作为蚀刻气源。从固体源以高蒸气压将碘气供应到处理室中。在低温和低功率的条件下实现了垂直和平滑的蚀刻。典型的蚀刻速率为0.4μm/ min。我们认为，固态I_2-ICP刻蚀是使用抗蚀剂掩模进行基于InP的器件制造的非常简单且有用的工艺。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters》 |2005年第19期|p.L576-L577|共2页
作者
Akihiro MATSUTANI; Hideo OHTSUKI; Fumio KOYAMA;
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作者单位

Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
iodine; InP; inductively coupled plasma (ICP); dry etching; solid source;

机译：碘;铟磷;电感耦合等离子体（ICP）;干法刻蚀;固体源;

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1. Inductively Coupled Plasma Etching of Silicon Using Solid Iodine as an Etching Gas Source [J] . Akihiro Matsutani, Hideo Ohtsuki, Fumio Koyama Japanese journal of applied physics . 2011,第6Issue2期

机译：固态碘作为蚀刻气源的硅电感耦合等离子体蚀刻
2. Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching [J] . R. Zhang, Z. Ren, S. Yu Journal of Vacuum Science & Technology . 2008,第2期

机译：级联反应离子刻蚀/电感耦合等离子体刻蚀InGaAsP / InP双浅脊矩形环形激光光子集成电路的制备与表征
3. Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching [J] . R. Zhang, Z. Ren, S. Yu Journal of Vacuum Science & Technology . 2008,第2期

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4. Small-feature-size Etching of InP/InGaAsP by inductively coupled plasma at ultra-low pressure [C] . Li Yongzhuo, Cui Kaiyu, Huang Yidong, 2012 17th Opto-Electronics and Communications Conference : Technical Digest . 2012

机译：超低压感应耦合等离子体对InP / InGaAsP的小尺寸蚀刻
5. Comparison of high-density electron cyclotron resonance and inductively coupled plasma sources for etching of electronic materials: New plasma etch regimes for electronic materials. [D] . Lee, Jewon. 1997

机译：用于电子材料蚀刻的高密度电子回旋共振和感应耦合等离子体源的比较：电子材料的新等离子体蚀刻方案。
6. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas [O] . Yang Li, Cong Wang, Zhao Yao, 2014

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7. Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure [O] . Kaiyu Cui, Yongzhuo Li, Xue Feng, 2013

机译：利用超低压电感耦合等离子体刻蚀制备Inp异质结构中的高纵横比双槽光子晶体波导
8. Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries: Part II. InP, InSb, InGaP and InGaAs; Plasma Chemistries and Plasma Processes [R] . Abernathy, C. R. , Cho, H. , Hahn, Y. B. , 1998

机译：基于ICl和IBr的化学中的电感耦合等离子体蚀刻：第二部分。 Inp，Insb，InGap和InGaas;等离子体化学和等离子体处理

Iodine Solid Source Inductively Coupled Plasma Etching of InP

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