Evolution of Self-Assembled InAs/InP Islands into Quantum Rings

Jaakko Sormunen; Juha Riikonen; Teppo Hakkarainen; Markku Sopanen; Harri Lipsanen

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Evolution of Self-Assembled InAs/InP Islands into Quantum Rings

机译：自组装的InAs / InP岛演化成量子环

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Fabrication of quantum rings (QRs) by transforming self-assembled InAs islands on InP is studied. The islands are annealed in-situ in a tertiarybutylphosphine ambient at varying temperatures. The duration of the annealing step is also varied. A partial capping of the InAs islands is not required to achieve the morphological change into rings. The evolution of the transformation is observed ex-situ by atomic force microscopy and photoluminescence measurements. The morphological transformation is accompanied by a compositional change of InAs into InAsP. The results support our conclusions that the QR formation is mostly due to strain-driven kinetic effects.

机译：研究了通过在InP上变换自组装InAs岛来制造量子环（QRs）。这些岛在叔丁基膦环境中在不同温度下原位退火。退火步骤的持续时间也变化。不需要对InAs岛进行部分封盖，即可将形态改变成环形。通过原子力显微镜和光致发光测量在异位观察到转变的演变。形态转变伴随着InAs向InAsP的组成变化。结果支持我们的结论，即QR形成主要归因于应变驱动的动力学效应。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2005年第45期|p.L1323-L1325|共3页
作者
Jaakko Sormunen; Juha Riikonen; Teppo Hakkarainen; Markku Sopanen; Harri Lipsanen;
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作者单位

Optoelectronics Laboratory, Micronova, Helsinki University of Technology, P. O. Box 3500, FIN-02015 TKK, Finland;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
quantum rings; quantum dots; InAs islands; self-assembled growth; photoluminescence;

机译：量子环;量子点;InAs岛;自组装生长;光致发光;

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专利

1. Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping [J] . Sormunen J, Riikonen J, Mattila M, Nano letters . 2005,第8期

机译：自组装的InAs / InP量子点无需覆盖即可转换成量子环
2. Electronic structure of self-assembled InAs/InP quantum dots: Comparison with self-assembled InAs/GaAs quantum dots [J] . Ming Gong, Kaimin Duan, Chuan-Feng Li, Physical review. B, Condensed Matter And Materials Physics . 2008,第4期

机译：自组装InAs / InP量子点的电子结构：与自组装InAs / GaAs量子点的比较
3. Families of islands in InAs/InP self-assembled quantum dots: a census obtained from magneto-photoluminescence [J] . S Raymond, S Studenikin, S-J Cheng, Semiconductor science and technology . 2003,第4期

机译：InAs / InP自组装量子点中的岛族：磁光致发光普查
4. Strong carrier confinement in self-assembled InAs/InP001 elongated quantum islands emitting at 1.55/spl mu/m [C] . Salem, B., Guillot, Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th . 2002

机译：自组装InAs / InP 001细长量子岛中的强载流子限制以1.55 / spl mu / m发射
5. Island evolution of self-assembled germanium/silicon(100) quantum dots. [D] . Zhang, Yangting. 2002

机译：自组装锗/硅（100）量子点的岛演化。
6. Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates [O] . NW Strom, Zh M Wang, JH Lee, 2007

机译：GaAs环状纳米结构模板上的自组装InAs量子点形成
7. Electronic structure of self-assembled InAs/InP quantum dots: A Comparison with self-assembled InAs/GaAs quantum dots [O] . Gong, Ming, Duan, Kaimin, Li, Chuan-Feng, 2007

机译：自组装Inas / Inp量子点的电子结构：a 与自组装Inas / Gaas量子点的比较

Evolution of Self-Assembled InAs/InP Islands into Quantum Rings

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