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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Flat Band Voltage Shifts in Pentacene Organic Thin-Film Transistors
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Flat Band Voltage Shifts in Pentacene Organic Thin-Film Transistors

机译：并五苯有机薄膜晶体管的平带电压偏移

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摘要

We have identified the mechanism of capacitance-voltage (C-V) hysteresis behavior often observed in pentacene organic thin-film transistors (OTFTs). The C-V characteristics were measured for pentacene OTFTs fabricated on glass substrates with MoW as gate/source/drain electrode and tetraethoxysilane (TEOS) SiO_2 as gate insulator. The measurements were made at room temperature and elevated temperatures. From the room temperature measurements, we found that the hysteresis behavior was caused by hole injection into the gate insulator from the pentacene semiconductor for large negative gate voltages, resulting in the negative flat-band voltage shift. However electron injection was observed only at elevated temperatures.
机译：我们已经确定了并五苯有机薄膜晶体管（OTFT）中经常观察到的电容电压（C-V）滞后行为的机理。测量了在MoW作为栅/源/漏电极和四乙氧基硅烷（TEOS）SiO_2作为栅绝缘体的玻璃基板上并五苯OTFT的C-V特性。在室温和升高的温度下进行测量。从室温测量中，我们发现磁滞行为是由于在较大的负栅极电压下从并五苯半导体向栅极绝缘体注入空穴而引起的，从而导致负平带电压漂移。然而，仅在升高的温度下观察到电子注入。

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