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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C_4F_8 and Si_2H_6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics
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Plasma-Enhanced Chemical Vapor Deposition Growth of Fluorinated Amorphous Carbon Thin Films Using C_4F_8 and Si_2H_6/He for Low-Dielectric-Constant Intermetallic-Layer Dielectrics

机译：C_4F_8和Si_2H_6 / He用于低介电常数金属间层电介质的氟化非晶碳薄膜的等离子体化学气相沉积生长

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摘要

The Si_2H_6/He gas mixture was used for growing fluorinated amorphous carbon thin films (a-C:F) for low-dielectric-constant intermetallic-layer dielectrics by plasma-enhanced chemical vapor deposition (PECVD) with C_4F_8, which has a lower fluorine/carbon ratio than CF_4. Si_2H_6 captures excessive fluorine ions and carries C_4F_8 to the substrate. It is also much safer than other carrier gases such as H_2 or CH_4. To characterize and improve film properties, we changed conditions such as deposition temperature and ambient pressure, and we measured the growth rate, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and C-V characteristics. At a low temperature, the film properties were very poor, although the growth rate was very high. On the other hand, the growth rate was low at a high temperature. The growth rate increased with deposition pressure. The XPS result showed that the carbon peaks shifted to a higher energy level due to a carbon-fluorine combination, and the FT-IR results showed a bonding between C-F and C-F_2. The dielectric constants of the samples were in the range of 1.5-5 and the sample with a constant of 2.18 showed relatively good thermal characteristics.
机译：Si_2H_6 / He气体混合物用于通过含C / 4F_8的等离子增强化学气相沉积（PECVD）来生长低介电常数金属间层间电介质的氟化非晶碳薄膜（aC：F）比CF_4。 Si_2H_6捕获过量的氟离子，并将C_4F_8携带到基板上。它也比其他载气（例如H_2或CH_4）安全得多。为了表征和改善薄膜性能，我们改变了沉积温度和环境压力等条件，并测量了生长速率，傅立叶变换红外光谱（FT-IR），X射线光电子能谱（XPS）和C-V特性。在低温下，尽管生长速率非常高，但膜性能非常差。另一方面，在高温下生长速率低。生长速率随着沉积压力的增加而增加。 XPS结果表明，由于碳-氟的结合，碳峰移至了更高的能级，而FT-IR结果表明C-F和C-F_2之间存在键合。样品的介电常数在1.5-5的范围内，常数为2.18的样品显示出相对良好的热特性。

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