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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Outgassing Characteristics of Low-Molecular-Weight Resists for Extreme Ultraviolet Lithography
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Outgassing Characteristics of Low-Molecular-Weight Resists for Extreme Ultraviolet Lithography

机译：低分子光刻胶的超分子光刻胶除气特性

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摘要

We discuss the outgassing characteristics under extreme ultraviolet (EUV) exposure for a new resist system based on amorphous low-molecular-weight (Mw) polyphenols consisting of 4,4'-methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclo-hexylphenyl)]methyl] phenol (3M6C-MBSA) compared with polyhydroxystyrene. (PHOST) The outgassing characteristics of the photoresist based on the PHOST resin were better than those of the photoresist based on 3M6C-MBSA as the base material. However, when the same polymer was reacted with a protecting group, the outgassing characteristics were reversed. The decomposition reaction mechanism under EUV exposure is discussed on the basis of results from both mass spectrometry and FT-IR measurements. The results indicate that the reactions of 3M6C-MBSA (Resist B) and PHOST (Resist D) under EUV exposure have different mechanisms. It was confirmed that the decomposition of the molecular backbone is the main reaction for 3M6C-MBSA, whereas the decomposition of the protective group is" the main reaction for PHOST.
机译：我们讨论了基于由4,4'-亚甲基双[2- [di（2-甲基-4-羟基）组成的无定形低分子量（Mw）多酚的新型抗蚀剂系统在极端紫外线（EUV）曝光下的除气特性。 -5-环-己基苯基）]甲基]苯酚（3M6C-MBSA）与聚羟基苯乙烯比较。 （PHOST）基于PHOST树脂的光致抗蚀剂的脱气特性优于基于3M6C-MBSA作为基材的光致抗蚀剂的脱气特性。但是，当同一聚合物与保护基反应时，放气特性相反。根据质谱和FT-IR测量的结果，讨论了EUV暴露下的分解反应机理。结果表明，EUV暴露下3M6C-MBSA（抵抗剂B）和PHOST（抵抗剂D）的反应具有不同的机理。证实了分子骨架的分解是3M6C-MBSA的主要反应，而保护基的分解是“ PHOST的主要反应”。

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