Field-Emission Characteristics of Carbon Nanotube Single Tip Grown on Si Cone

Tomomi Yoshimoto; Tatsuo Iwata; Kazuhiko Matsumoto

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Field-Emission Characteristics of Carbon Nanotube Single Tip Grown on Si Cone

机译：硅锥上生长的碳纳米管单尖端的场发射特性

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The field-emission characteristics of a carbon nanotube single tip were investigated as functions of annealing temperature. The current-voltage (Ⅰ-Ⅴ) characteristics (linearity of Fowler-Nordheim plots as well as emission pattern) were altered by annealing in the temperature range from 470 to 1270 K. On the other hand, the voltages required for the same emission current were relatively unaltered. The emission current showed little dependence on the temperature of the carbon nanotube (CNT) single tip. The fluctuation of the emission current was markedly improved by increasing the annealing temperature.

机译：研究了碳纳米管单尖端的场发射特性与退火温度的关系。通过在470至1270 K的温度范围内进行退火，可以改变电流-电压（Ⅰ-Ⅴ）特性（Fowler-Nordheim曲线的线性以及发射模式）。另一方面，相同发射电流所需的电压相对不变。发射电流几乎不依赖于碳纳米管（CNT）单尖端的温度。通过提高退火温度，发射电流的波动得到明显改善。

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来源
《Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers》 |2005年第9a期|p.6739-6741|共3页
作者
Tomomi Yoshimoto; Tatsuo Iwata; Kazuhiko Matsumoto;
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作者单位

School of Engineering, Hokkaido Tokai University, 5-1-1-1 Minamisawa, Minami-ku, Sapporo 005-8601, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
carbon nanotube; single tip; field-emission; annealing;

机译：碳纳米管;单尖端;场发射;退火;

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Field-Emission Characteristics of Carbon Nanotube Single Tip Grown on Si Cone

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