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首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Low Microwave Surface Resistance in NdBa_2Cu_3O_(7-δ) Films Grown by Molecular Beam Epitaxy
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Low Microwave Surface Resistance in NdBa_2Cu_3O_(7-δ) Films Grown by Molecular Beam Epitaxy

机译：分子束外延生长NdBa_2Cu_3O_（7-δ）薄膜的低微波表面电阻

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摘要

We report the growth of NdBa_2Cu_3O_(7-δ) films on (100) MgO substrate by Molecular Beam Epitaxy (MBE). Large area NdBa_2Cu_3O_(7-δ) films with homogeneous superconducting properties were grown by precise control of stoichiometry and the optimisation of growth parameters. The stoichiometric ratio of Nd:Ba:Cu close to 1:2:3 yields films with T_C of 94 K and J_C values above 3.5 MA/cm~2 at 77 K on bare MgO substrate. The NdBa_2Cu_3O_(7-δ) films grown under optimised conditions had excellent in-plane texture and good metallicity. The most significant characteristic of our MBE grown NdBa_2Cu_3O_(7-δ) films is the very low microwave surface resistance values at all temperature range compared to its YBa_2Cu_3O_(7-δ) counterpart with typical value of ～870 μΩ at 77 K & 22 GHz. Our results on the MBE grown NdBa_2Cu_3O_(7-δ) films suggests that NdBa_2Cu_3O_(7-δ) is a superior choice for the realisation of commercial microwave applications.
机译：我们通过分子束外延（MBE）报告了NdBa_2Cu_3O_（7-δ）膜在（100）MgO衬底上的生长。通过化学计量的精确控制和生长参数的优化，生长了具有均匀超导性能的大面积NdBa_2Cu_3O_（7-δ）薄膜。 Nd：Ba：Cu的化学计量比接近1：2：3时，在裸露的MgO衬底上，T_C为94 K，J_C值高于3.5 MA / cm〜2的薄膜在77 K下产生。在优化条件下生长的NdBa_2Cu_3O_（7-δ）薄膜具有优异的面内织构和良好的金属性。我们的MBE生长NdBa_2Cu_3O_（7-δ）薄膜的最显着特征是，与YBa_2Cu_3O_（7-δ）相比，其在所有温度范围内的微波表面电阻值都非常低，在77 K和22 GHz下典型值为〜870μΩ 。我们在MBE生长的NdBa_2Cu_3O_（7-δ）膜上的结果表明，NdBa_2Cu_3O_（7-δ）是实现商业微波应用的绝佳选择。

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