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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells
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Optical Quality Dependence on Growth Rate for Solid-Source Molecular Beam Epitaxy Grown Highly Strained GaInAsSb/GaAs Quantum Wells

机译：固体源分子束外延生长高应变GaInAsSb / GaAs量子阱的光学质量取决于增长率

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摘要

The optical quality dependence on the growth rate for Sb-introduced highly strained GaInAs quantum wells (QWs) was studied by solid-source molecular beam epitaxy (MBE). Noticeable improvements in the photoluminescence (PL) were observed upon lowering the growth rate, even for a highly strained material. Under an optimized Sb flux for each growth rate, a sample grown at the low growth rate of 0.09 μm/h showed a higher PL intensity than other samples grown at 0.17-0.57 μm/ h. These samples showed a flat surface in atomic force microscope (AFM) measurements, while Sb-free GaInAs QWs showed no PL emission and quite a rough surface caused by the three dimensional growth typically observed in a highly strained material grown at a low growth rate. It was found that a low growth rate is effective for improving the optical characteristics of highly strained GaInAs QWs in the case of Sb introduction.
机译：通过固体源分子束外延（MBE）研究了Sb引入的高应变GaInAs量子阱（QW）的光学质量对生长速率的依赖性。降低生长速率后，即使对于高度应变的材料，也可以观察到光致发光（PL）的显着改善。在针对每个生长速率的最佳Sb通量下，以0.09μm/ h的低生长速率生长的样品比以0.17-0.57μm/ h生长的其他样品具有更高的PL强度。这些样品在原子力显微镜（AFM）的测量中显示出平坦的表面，而无锑的GaInAs量子阱则没有PL发射，并且由于在以低生长速率生长的高应变材料中通常观察到的三维生长而导致了相当粗糙的表面。发现在引入Sb的情况下，低的生长速率对于改善高应变的GaInAs QW的光学特性是有效的。

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