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首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes >In Situ Epitaxial Growth of Lead Zirconate Titanate Films by Bias Sputtering at High RF Power
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In Situ Epitaxial Growth of Lead Zirconate Titanate Films by Bias Sputtering at High RF Power

机译：高射频功率下偏压溅射原位外延生长锆钛酸铅薄膜。

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摘要

High-quality epitaxial lead zirconate titanate (PZT) films with high growth rate were successfully grown by bias sputtering on (001) MgO single crystal substrates using a composite ceramic target. The composite ceramic target composed of a PbO pellet on the center of Pb_(1.2)(Zr_(0.4)Ti_(0.6))O_3 ceramics was necessary to stably obtain perovskite-phase PZT films under high RF power by sputtering. At high RF power, the application of DC bias voltages to the growing PZT films increased the growth rate and changed the Ti/Zr composition. In particular, the optimum negative bias voltage considerably improved the crystallinity and surface morphology of the films compared with the conventional sputtering process. The optimum negative bias voltage plays a role in suppressing the bombardments of the energetic negative oxygen ions on growing films and also in making low-energy positive ions assist help in crystallization.
机译：通过使用复合陶瓷靶在（001）MgO单晶衬底上进行偏压溅射，成功地生长了具有高生长速率的高质量外延钛酸锆钛酸铅（PZT）薄膜。在Pb_（1.2）（Zr_（0.4）Ti_（0.6））O_3陶瓷的中心由PbO颗粒组成的复合陶瓷靶对于通过溅射在高RF功率下稳定地获得钙钛矿相PZT膜是必需的。在高RF功率下，将DC偏置电压施加到生长的PZT膜上可以提高生长速率并改变Ti / Zr组成。特别地，与常规溅射工艺相比，最佳的负偏压极大地改善了膜的结晶度和表面形态。最佳的负偏置电压在抑制高能负氧离子轰击生长的薄膜时起作用，并且还可以使低能正离子有助于结晶。

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