Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor

Takafumi KAMIMURA; Kazuhiro YAMAMOTO; Kazuhiko MATSUMOTO

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Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor

机译：超低能氮离子辐照对碳纳米管通道单电子晶体管的影响

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The effects of ultra low nitrogen ion irradiation on room-temperature-operated carbon nanotube channel single-electron transistor have been investigated. The ion irradiation energy was 30 eV and the total number of ions was 2.5 x 10~(14) ions/cm~2 and 3.7 x 10~(15) ions/cm~2. After the irradiation, the Coulomb diamonds became larger with increasing in density of irradiated ions. Nitrogen ion irradiation was found to be effective in reducing the quantum dots size in the carbon nanotube channel single-electron transistor.

机译：研究了超低氮离子辐射对室温操作的碳纳米管沟道单电子晶体管的影响。离子辐射能量为30 eV，离子总数为2.5 x 10〜（14）离子/ cm〜2和3.7 x 10〜（15）离子/ cm〜2。辐照后，库仑钻石随着辐照离子密度的增加而变大。发现氮离子辐射可有效减小碳纳米管沟道单电子晶体管中的量子点尺寸。

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《Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes》 |2004年第5a期|p.2771-2773|共3页
作者
Takafumi KAMIMURA; Kazuhiro YAMAMOTO; Kazuhiko MATSUMOTO;
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作者单位

Univ. of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8577, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
carbon nanotube; ion irradiation; nitrogen-ion; single electron transistor; room temperature; defect; coulomb diamond;

机译：碳纳米管;离子辐照;氮离子;单电子晶体管;室温;缺陷;库仑金刚石;

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Effects of Ultra Low Energy Nitrogen Ion Irradiation on Carbon Nanotube Channel Single-Electron Transistor

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