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首页> 外文期刊>Japanese journal of applied physics >Newly developed process integration technologies for highly reliable 40 nm ReRAM
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Newly developed process integration technologies for highly reliable 40 nm ReRAM

机译:最新开发的工艺集成技术,用于高度可靠的40 nm ReRAM

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摘要

We have developed a 40 nm resistive random access memory (ReRAM) technology embedded in a foundry-standard CMOS process for low-power applications. Excellent reliability was achieved in 8 Mbit, 40 nm ReRAM: 100 k cycles and 10 year retention at 85 degrees C after 10 k cycles were demonstrated for resistive switching element (RSE) process technologies and filament characterization methods. Regarding process technologies for 40 nm ReRAM, we tackled four forms of integration. First, we experimented with RSE etching, to optimize damage-less etching of RSE, metal and dielectric. Second, we tried to maintain the back end of line process/parameter compatibility with the standard 40 nm CMOS process. Third, we developed our own techniques to form RSE cells that are protected against extra free oxygen to realize design flexibility. Fourth, we optimized the components of the high-resistivity layer (Ta2O5), specifically film density, and confirmed that it is possible to achieve both ease of occurrence of formation and reduced non-uniformity of the resistance values corresponding to the high resistive state. (C) 2019 The Japan Society of Applied Physics
机译:我们已经开发了一种40纳米电阻随机存取存储器(ReRAM)技术,该技术嵌入了用于低功耗应用的铸造标准CMOS工艺中。在8 Mbit,40 nm ReRAM中实现了出色的可靠性:对于电阻开关元件(RSE)工艺技术和灯丝表征方法,在100 k次循环和10 k次循环后在85摄氏度下保持10年。关于40 nm ReRAM的处理技术,我们解决了四种集成形式。首先,我们对RSE蚀刻进行了实验,以优化RSE,金属和电介质的无损蚀刻。其次,我们试图与标准40 nm CMOS工艺保持后端工艺/参数的后端兼容性。第三,我们开发了自己的技术来形成RSE电池,这些电池受到保护以免受多余的游离氧影响,从而实现设计灵活性。第四,我们优化了高电阻率层(Ta2O5)的成分,特别是膜密度,并确认既可以实现易于形成的过程,又可以降低与高电阻状态相对应的电阻值的不均匀性。 (C)2019日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sb期|SBBB06.1-SBBB06.8|共8页
  • 作者单位

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

    Panasonic Semicond Solut Co Ltd, 1 Kotari Yakemachi, Kyoto 6178520, Japan;

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