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首页> 外文期刊>Japanese journal of applied physics >Geometrical compensation for mode-matching of a (100) silicon ring resonator for a vibratory gyroscope
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Geometrical compensation for mode-matching of a (100) silicon ring resonator for a vibratory gyroscope

机译：用于振动陀螺仪的（100）硅环谐振器模式匹配的几何补偿

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摘要

A geometrical compensation design method in a (100) single crystal silicon (SCS) vibratory ring gyroscope (VRG) has been proposed in order to decrease frequency splits (Delta f) caused by anisotropic in-plane Young's modulus (E) of (100) SCS and realize mode-matching in VRG. The radial width as a function of the E was varied to equalize the effective bending stiffness along the different crystal directions. The finite element analysis (FEA) simulation verified that the Delta f decreased from 260 Hz to 145 Hz after compensation. By optimizing suspending beam dimensions, the simulated.f further decreased to 9 Hz. Both uncompensated and compensated resonators of 1-mm diameter were fabricated using a silicon-on insulator (SOI) wafer of a 22-mu m-thick device layer. The fabricated devices showed large Delta f because of fabrication error, which is adjusted by electrostatic tuning. After the electrostatic tuning, the measured minimum frequency splits for the compensated and uncompensated VRGs were about 54 Hz and 166 Hz, respectively. The small measured Delta f after the electrostatic tuning indicates that the proposed geometrical compensation is effective in eliminating frequency split caused by anisotropy in elastic constants. (C) 2019 The Japan Society of Applied Physics
机译：提出了一种在（100）单晶硅（SCS）振动环陀螺仪（VRG）中的几何补偿设计方法，以减少由（100）的各向异性面内杨氏模量（E）引起的频率分裂（Δf） SCS并在VRG中实现模式匹配。改变径向宽度作为E的函数，以使沿不同晶体方向的有效弯曲刚度相等。有限元分析（FEA）仿真证明，补偿后Delta f从260 Hz降低到145 Hz。通过优化悬挂波束的尺寸，模拟的f进一步降低至9 Hz。使用22微米厚器件层的绝缘硅（SOI）晶片制造了直径为1毫米的未补偿和补偿谐振器。由于制造误差，所制造的器件显示出较大的Δf，该误差可通过静电调谐来调节。在静电调谐之后，已补偿和未补偿VRG的最小测得的频率分割分别约为54 Hz和166 Hz。静电调谐后测得的Δf小，表明所提出的几何补偿可有效消除弹性常数各向异性引起的频率分裂。 （C）2019日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第sd期|SDDL06.1-SDDL06.6|共6页
  • 作者

    Shu Yunyi; Hirai Yoshikazu; Tsuchiya Toshiyuki; Tabata Osamu;

  • 作者单位

    Kyoto Univ, Dept Micro Engn, Nishikyo Ku, Kyoto 6158540, Japan;

    Kyoto Univ, Dept Micro Engn, Nishikyo Ku, Kyoto 6158540, Japan;

    Kyoto Univ, Dept Micro Engn, Nishikyo Ku, Kyoto 6158540, Japan;

    Kyoto Univ, Dept Micro Engn, Nishikyo Ku, Kyoto 6158540, Japan;

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