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首页> 外文期刊>Japanese journal of applied physics >Epitaxial growth of single-crystalline AIN layer on Si(111) by DC magnetron sputtering at room temperature
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Epitaxial growth of single-crystalline AIN layer on Si(111) by DC magnetron sputtering at room temperature

机译：通过DC磁控溅射在室温下通过DC磁控溅射外结晶AIN层的外延生长

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摘要

The epitaxial growth of an AlN layer on a Si(111) substrate at room temperature by DC magnetron sputtering was investigated. The predeposition of a 5-nm-thick Al layer on the Si substrate before the AlN deposition was found to be crucial for the epitaxial growth of the AlN layer. The orientation relationships of AlN/Al/Si were observed to be AlN[1 (1) over bar 00] parallel to Al [0 (1) over bar1] parallel to Si[11 (2) over bar] and AlN[11 (2) over bar0] parallel to Al[011] parallel to Si[1 (1) over bar0], indicating the epitaxial growth of the AlN layer on the Si(111) substrate. This epitaxial growth of the AlN layer was attributed to the smaller lattice mismatches between AlN[1 (1) over bar 00] and Al[0 (1) over bar1] and AlN[11 (2) over bar0] and Al[011] than that between AlN[11 (2) over bar0] and Si[1 (1) over bar0]. (C) 2018 The Japan Society of Applied Physics
机译：研究了DC磁控溅射在室温下Si（111）衬底上的ALN层的外延生长。在AlN沉积之前发现在Si衬底上的5-nm厚的Al层的预热对于AlN层的外延生长至关重要。 AlN / Al / Si的取向关系被观察到与甲基1]平行于Si的Al [0（1）的Aln [1）倍00]，平行于Si [11（2）rB）和Aln [11（ 2）与律图2）平行于α[011]，与Si [1（1）上方的Si [1（1）]，表示Si（111）衬底上的ALN层的外延生长。 AlN层的外延生长归因于Aln [1）上的较小的晶格不匹配，AlN [1）上方的条，Al [0（1）上方Bar1]和AlN [11（2）），Aln [011]比Aln [11（2）over Bar0]和Si [1（1）over bar0]。 （c）2018年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第6期|060306.1-060306.4|共4页
  • 作者

    Shin In-Su; Kim Jongmyeong; Lee Donghyun; Kim Donghyun; Park Yongjo; Yoon Euijoon;

  • 作者单位

    Seoul Natl Univ Dept Mat Sci & Engn Seoul 08826 South Korea;

    Seoul Natl Univ Dept Mat Sci & Engn Seoul 08826 South Korea;

    Seoul Natl Univ Dept Mat Sci & Engn Seoul 08826 South Korea|Korea Adv Nano Fab Ctr Suwon 16229 South Korea;

    Seoul Natl Univ Adv Inst Convergence Technol Energy Semicond Res Ctr Suwon 16229 South Korea;

    Seoul Natl Univ Dept Mat Sci & Engn Seoul 08826 South Korea|Seoul Natl Univ Adv Inst Convergence Technol Energy Semicond Res Ctr Suwon 16229 South Korea|Seoul Natl Univ Res Inst Adv Mat Seoul 08826 South Korea|Seoul Natl Univ Interuniv Semicond Res Ctr Seoul 08826 South Korea;

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