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首页> 外文期刊>Japanese journal of applied physics >Electrical fluctuation spectra due to characteristic thermal diffusion in Ta thin films deposited by RF-magnetron sputtering
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Electrical fluctuation spectra due to characteristic thermal diffusion in Ta thin films deposited by RF-magnetron sputtering

机译：由于RF-磁控溅射沉积的TA薄膜特征热扩散导致的电波动谱

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摘要

In this study, we investigate electrical resistivity and resistance fluctuation of Ta thin films deposited by RF-magnetron sputtering, and discuss the relation between the crystal structure and resistance fluctuation. The resistance fluctuation in the films shows exponential behavior in power spectral densities (PSDs), and the exponents of the PSDs are dependent on the film thickness. While the PSDs and exponents of thin films less than 10 nm or more than 60 nm are lower, the intermediate thickness samples exhibit higher PSDs. The intermediate thickness samples have strained alpha- and beta-phases, and a positive correlation is presumed between the power exponent and the crystalline strain. Additionally, the thermal diffusion path, which depends on the coexistence of the two strained phases, has a characteristic fractal-like dimension with less-than-2 dimensions in 2D thin films. Numerical simulation shows that the thermal diffusion path, which is derived from the coexistence of alpha- and beta-Ta grains, is related to the exponent in the PSDs. The higher exponents originate from the strained phases, and measurement of the PSDs in these thin films enables the detection of crystalline strain. (C) 2020 The Japan Society of Applied Physics
机译：在该研究中，我们研究了RF-磁控溅射沉积的TA薄膜的电阻率和阻力波动，并讨论了晶体结构与电阻波动之间的关系。膜中的电阻波动示出了功率谱密度（PSD）中的指数行为，并且PSD的指数取决于膜厚度。虽然小于10nm或大于60nm的薄膜的PSD和指数较低，但中间厚度样品表现出更高的PSD。中间厚度样品具有应变的α-和β-相，在功率指数和结晶菌株之间推测正相关。另外，取决于两个应变相的共存的热扩散路径具有特征分形尺寸，其具有2D薄膜的尺寸小于2尺寸。数值模拟表明，源自α-和β-Ta晶粒共存的热扩散路径与PSD中的指数有关。较高的指数源自应变相，并且这些薄膜中的PSD的测量能够检测结晶菌株。 （c）2020日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2020年第2期|025509.1-025509.7|共7页
  • 作者

    Uesugi Ryota; Komine Takashi; Mizuno Masaomi; Ando Ryo; Akabane Hideo;

  • 作者单位

    Ibaraki Univ Coll Engn 4-12-1 Nakanarusawa Hitachi Ibaraki 3168511 Japan;

    Ibaraki Univ Coll Engn 4-12-1 Nakanarusawa Hitachi Ibaraki 3168511 Japan;

    Ibaraki Univ Coll Engn 4-12-1 Nakanarusawa Hitachi Ibaraki 3168511 Japan;

    Inst Technol Innovat Ctr ITIC Ibaraki Prefecture 3781-1 Nagaoka Ibaraki Ibaraki 3113195 Japan;

    Ibaraki Univ Coll Engn 4-12-1 Nakanarusawa Hitachi Ibaraki 3168511 Japan;

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