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首页> 外文期刊>Japanese journal of applied physics >Theoretical potential of extremely high quality factors of β-Ga_2O_3 based MEMS resonators
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Theoretical potential of extremely high quality factors of β-Ga_2O_3 based MEMS resonators

机译：基于β-GA_2O_3的MEMS谐振器极高质量因素的理论潜力

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摘要

We show theoretically and via simulation that β-Ga_2O_3 semiconductor is potentially a superior material for mechanical resonating structures applicable to micro-electro-mechanical system sensors. In particular, β-Ga_2O_3 may enable a thermoelastic dissipation loss limited quality factor on order of 10~8, which is the highest among all known conductive materials including metals and semiconductors. The Akhiezer limit of the quality factor and frequency product of resonators based on β-Ga_2O_3 is predicted to be extremely high at 3.3 × 10~(15) Hz. β-Ga_2O_3 based resonators may even exhibit higher quality factors than those based on ultra-low expansion glass due to the elimination of metal electrodes in the former. We also present a method to graphically extract the quality factor from the frequency response function without measuring the FWHM bandwidth.
机译：我们在理论上和通过模拟显示β-GA_2O_3半导体可能是适用于适用于微电机械系统传感器的机械谐振结构的优异材料。特别地，β-GA_2O_3可以使热弹性耗散损失有限的质量因子为10〜8，这是包括金属和半导体的所有已知导电材料中的最高。基于β-GA_2O_3的谐振器的质量因数和频率产品的Akhiezer限制预计在3.3×10〜（15）Hz中非常高。基于β-GA_2O_3的谐振器甚至可以表现出比以前的金属电极的消除由于超低膨胀玻璃基于超低膨胀玻璃的谐振器。我们还提出了一种方法来从频率响应功能从频率响应功能提取质量因子，而不测量FWHM带宽。

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  • 来源
    《Japanese journal of applied physics》 |2020年第1期|011002.1-011002.6|共6页
  • 作者

    Yen-Ju Chen; Chang-Jung Chung; Jian V. Li;

  • 作者单位

    Department of Aeronautics and Astronautics National Cheng Kung University Tainan Taiwan;

    Department of Aeronautics and Astronautics National Cheng Kung University Tainan Taiwan;

    Department of Aeronautics and Astronautics National Cheng Kung University Tainan Taiwan;

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