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首页> 外文期刊>Japanese journal of applied physics >Identification of fine structures at the surface of epi-ready GaN wafer observed by confocal differential interference contrast microscopy
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Identification of fine structures at the surface of epi-ready GaN wafer observed by confocal differential interference contrast microscopy

机译：通过共聚焦差异干扰对比度显微镜观察到ePI就绪GaN晶片表面的细结构的识别

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Confocal differential interference contrast microscopy detected dots and line contrasts on the surface of epi-ready (0001) GaN wafers. Large and small dots consisted of pits, similar to 1.4 mu m in width and similar to 7 nm in depth, and similar to 0.5 mu m in width and similar to 2.7 nm in depth, respectively; the pits mainly formed on the outcrops of dislocations, with Burgers vectorsb = candb = a, respectively, via inadequate chemical mechanical polishing. Lines consisted of scratches induced via polishing. Deep scratches accompanied dense basal plane dislocation loops. (c) 2020 The Japan Society of Applied Physics
机译：共聚焦差异干扰对比度显微镜检测到的点和线对比在ePI准备就绪（0001）GaN晶片表面上。大小的小点由凹坑组成，与宽度为1.4μm，与7nm的深度相似，宽度的0.5μm，分别与2.7nm相似;主要形成在位错露头上，分别通过不足的化学机械抛光，分别具有汉堡vectorsb> =烛台。线包括通过抛光引起的划痕。深划痕伴随着密集的基础平面脱位环。 （c）2020日本应用物理学会

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