Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor

Niu Di; Wang Quan; Li Wei; Chen Changxi; Xu Jiankai; Jiang Lijuan; Feng Chun; Xiao Hongling; Wang Qian; Xu Xiangang; Wang Xiaoliang

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Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor

机译：用于高性能常关P-GaN高电子移动晶体管的混合栅结构

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A normally-off hybrid-gate p-GaN high-electron-mobility transistor (HEMT) is presented in this paper. The gate region is designed as a parallel connection between the Schottky-gate and the metal-insulator-semiconductor gate by inserting a dielectric layer under part of the gate metal. Compared to the conventional Schottky-gate p-GaN HEMT, the fabricated hybrid-gate p-GaN HEMT showed a higher threshold voltage of 3.2 V (increases by 167%), and the maximum transconductance is only a slight decrease (reduces by 23%). At the same time, the forward gate leakage current of the hybrid-gate structure is smaller. Furthermore, through simulation, we revealed that the increase in the threshold voltage originated from the delayed full opening of the two-dimensional electron gas. And we also find that the parameters of the gate dielectric layer have a great influence on the performance of the device. The results show that the hybrid-gate structure is a more promising device structure.

机译：本文提出了常关混合栅极P-GaN高电子迁移率晶体管（HEMT）。通过在栅极金属的一部分下插入介电层，栅极区域设计成在肖特基栅极和金属绝缘体半导体栅极之间的平行连接。与传统的肖特基栅极P-GaN Hemt相比，制造的混合栅极P-GaN HEMT显示出较高的阈值电压为3.2V（增加167％），最大跨导仅略微降低（减少23％）。同时，混合栅极结构的正向栅极漏电流较小。此外，通过模拟，我们透露阈值电压的增加源自二维电子气体的延迟全开。我们还发现栅极介电层的参数对装置的性能产生了很大的影响。结果表明，混合栅极结构是一种更有前途的装置结构。

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来源
《Japanese journal of applied physics》 |2020年第11期|111001.1-111001.5|共5页
作者
Niu Di; Wang Quan; Li Wei; Chen Changxi; Xu Jiankai; Jiang Lijuan; Feng Chun; Xiao Hongling; Wang Qian; Xu Xiangang; Wang Xiaoliang;
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Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China;

Shandong Univ State Key Lab Crystal Mat Jinan 250100 Peoples R China;

Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci Beijing 100083 Peoples R China|Univ Chinese Acad Sci Ctr Mat Sci & Optoelect Engn Beijing 100049 Peoples R China|Univ Chinese Acad Sci Sch Microelect Beijing 100049 Peoples R China;

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正文语种 eng
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关键词
GaN HEMT; Schottky-gate p-GaN HEME; hybrid-gate p-GaN HEMT;

机译：GaN Hemt;肖特基门P-Gan Heme;杂交门P-GaN HEMT;

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专利

1. Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment [J] . Sun Chi, Hao Ronghui, Xu Ning, Annales de l'I.H.P . 2019,第5期

机译：采用氧等离子体处理的常关型p-GaN / AlGaN / GaN高电子迁移率晶体管
2. Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment [J] . Sun Chi, Hao Ronghui, Xu Ning, Annales de l'I.H.P . 2019,第5期

机译：常关的P-GaN / AlGaN / GaN高电子迁移晶体管使用氧等离子体处理
3. Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors [J] . M. Tapajna, O. Hilt, E. Bahat-Treidel, Applied Physics Letters . 2015,第19期

机译：常关型p-GaN / AlGaN / GaN高电子迁移率晶体管中栅二极管退化的研究
4. 1.7 kV/1.0 mΩcm2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure [C] . Daisuke Shibata, Ryo Kajitani, Masahiro Ogawa, IEEE International Electron Devices Meeting . 2016

机译：具有重新生长的p-GaN / AlGaN / GaN半极性栅极结构的GaN衬底上的1.7 kV / 1.0mΩcm2常关型垂直GaN晶体管
5. The design, analysis and characterization of high-performance heterostructure bipolar transistors. [D] . Chen, James Jen-Chuan. 1991

机译：高性能异质结构双极晶体管的设计，分析和表征。
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors [O] . Hori, Y., Yatabe, Z., Hashizume, T. 2013

机译：表征Al2O3 / AlGaN / GaN结构中的界面态以提高高电子迁移率晶体管的性能

Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor

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