首页> 外文期刊>Journal of Applied Physics >Strain states of AIN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

【24h】

Strain states of AIN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111)

机译：AIN / GaN应力缓解层的应变状态及其对100mm Si（111）上氨分子束外延生长的GaN缓冲层的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The effect of strain states of AlN/GaN-stress mitigating layer (SML) on buried crack density and its subsequent influence on the residual stresses in GaN buffer layers grown using ammonia-molecular bearn epitaxy on 100-mm Si(111) substrate has been investigated. Different stages involved in the formation of buried cracks, which are crack initialization, growth of relaxed. A1N layer, and subsequent lateral over growth, are identified using in-situ curvature measurements. While the increase of GaN thickness in AlN/GaN-SML enhanced its compressive strain relaxation and resulted in reduced buried crack spacing, the variation of AlN thickness did not show any effect on the crack spacing. Moreover, the decrease in the crack spacing (or increase in the buried crack density) was found to reduce the residual compression in 1st and 2nd GaN layers of AlN/GaN-SML structure. The higher buried crack density relaxed the compressive strain in 1st GaN layer, which further reduced its ability to compensate the tensile stress generated during substrate cool down, and hence resulted in lower residual compressive stress in 2nd GaN layer.

机译：已经研究了AlN / GaN应力缓解层（SML）的应变状态对埋藏裂纹密度的影响以及其对使用氨分子贝尔外延在100 mm Si（111）衬底上生长的GaN缓冲层中的残余应力的影响。调查。埋藏裂缝形成的不同阶段包括裂缝的初始化，松弛的增长。使用原位曲率测量来确定AlN层以及随后的横向过度生长。尽管AlN / GaN-SML中GaN厚度的增加增强了其压缩应变松弛并导致埋入式裂纹间距减小，但AlN厚度的变化对裂纹间距没有任何影响。此外，发现裂纹间距的减小（或埋入裂纹密度的增加）减小了AlN / GaN-SML结构的第一和第二GaN层中的残余压缩。较高的掩埋裂纹密度使第一GaN层中的压缩应变松弛，这进一步降低了其补偿在衬底冷却期间产生的拉应力的能力，因此导致第二GaN层中的残余压缩应力较低。

著录项

来源
《Journal of Applied Physics》 |2013年第12期|123503.1-123503.6|共6页
作者
L. Ravikiran; K. Radhakrishnan; N. Dharmarasu; M. Agrawal; S. Munawar Basha;
展开▼
作者单位

NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798;

NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798;

Temasek Laboratories, Nanyang Technological University, Singapore 637553;

NOVITAS-Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798;

Temasek Laboratories, Nanyang Technological University, Singapore 637553;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si(111) [J] . Ravikiran L., Radhakrishnan K., Dharmarasu N., Journal of Applied Physics . 2013,第12期

机译：AlN / GaN应力缓解层的应变状态及其对100mm Si（111）上氨分子束外延生长的GaN缓冲层的影响
2. Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy [J] . M. Agrawal, N. Dharmarasu, K. Radhakrishnan, Journal of Crystal Growth . 2013,第sepa1期

机译：氨分子束外延在100mm Si（111）上的AlGaN / AlN应力缓解层上生长的GaN中的拉伸应变起源
3. Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy [J] . M. Agrawal, N. Dharmarasu, K. Radhakrishnan, Thin Solid Films . 2012,第24期

机译：通过氨分子束外延在100-mm Si（111）上的AlGaN / AlN应力缓解层上生长的GaN的结构特性
4. Impact of GaN buffer layer thickness on structural and optical properties of AlGaN/GaN based high electron mobility transistor structure grown on Si(111) substrate by plasma assisted molecular beam epitaxy technique [C] . Ghosh Kankat, Das Sudipta, Ganguly S., 2015 Third International Conference on Computer, Communication, Control and Information Technology . 2015

机译：GaN缓冲层厚度对等离子辅助分子束外延技术在Si（111）衬底上生长的AlGaN / GaN基高电子迁移率晶体管结构的结构和光学性能的影响
5. Structural and Optical Properties of Molecular Beam Epitaxy Grown InAsBi Bulk Layers and Quantum Wells [D] . Shalindar Christraj, Arvind Joshua Jaydev 2016

机译：InAsBi体层和量子阱中分子束外延生长的结构和光学性质
6. Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy [O] . Ing-Song Yu, Chun-Pu Chang, Chung-Pei Yang, 2014

机译：等离子体辅助分子束外延通过液滴外延对Si（111）上的GaN纳米点进行表征和密度控制
7. High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer [O] . Fong WK, Zhu CF, Leung BH, 2001

机译：RF等离子体辅助分子束外延在中温GaN缓冲层上生长的高迁移率GaN外延层
8. Strain-relaxed InGaAs buffer layers grown by molecular-beam epitaxy for 1.3 (mu)m Fabry-Perot optical modulators [R] . Hammons, B E, Fritz, I J, Brennan, T M, 1992

机译：通过分子束外延生长的应变松弛InGaas缓冲层，用于1.3（μm）法布里 - 珀罗光调制器

获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

客服微信
服务号