Electronic properties of W-encapsulated Si cluster film on Si (100) substrates

S. J. Park; N. Uchida; T. Tada; T. kanayama

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Electronic properties of W-encapsulated Si cluster film on Si (100) substrates

机译：Si（100）衬底上W封装的Si团簇膜的电子性能

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We have fabricated thin films composed of W-encapsulated Si clusters (WSi_(10)) on Si substrates and investigated their electronic properties using scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). An epitaxial layer was observed at the interface with the Si substrate, and an amorphous layer was on top. The bulk plasmon of the WSi_(10) cluster film was measured and compared with those of crystalline Si (c-Si) and WSi_2 films. We found similar plasmon energies in the epitaxial and amorphous layers of the WSi_(10) cluster film. The plasmon peak of the WSi_(10) cluster film is shifted to higher energy compared with that of c-Si, which is related to the electron density increase in the valence band. The Si-L_(23) absorption edge spectra show that the conduction-band density of states in Si was modified by hybridization between Si and W atoms.

机译：我们已经制造了由W封装的Si团簇（WSi_（10））组成的薄膜，并使用扫描透射电子显微镜（STEM）和电子能量损失谱（EELS）研究了它们的电子性能。在与Si衬底的界面处观察到外延层，并且非晶层在顶部。测量了WSi_（10）团簇膜的体等离子体激元，并将其与晶体Si（c-Si）和WSi_2膜的体等离子体激元进行了比较。我们在WSi_（10）团簇膜的外延和非晶层中发现了类似的等离子体激元能量。与c-Si相比，WSi_（10）团簇膜的等离激元峰移至更高的能量，这与价带中电子密度的增加有关。 Si-L_（23）吸收边缘光谱表明，Si中的态的导带密度通过Si和W原子之间的杂化而改变。

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来源
《Journal of Applied Physics》 |2012年第6期|p.063719.1-063719.5|共5页
作者
S. J. Park; N. Uchida; T. Tada; T. kanayama;
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作者单位

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;

Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology,1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan;

National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba,Ibaraki 305-8562, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Electronic properties of W-encapsulated Si cluster film on Si (100) substrates

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