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首页> 外文期刊>Journal of Applied Physics >Anomalous strain profiles and electronic structures of a GaAs-capped InAs/In_(0.53)Ga_(0.47)As quantum ring
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Anomalous strain profiles and electronic structures of a GaAs-capped InAs/In_(0.53)Ga_(0.47)As quantum ring

机译：GaAs封顶的InAs / In_（0.53）Ga_（0.47）As量子环的异常应变分布和电子结构

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摘要

We investigate the strain profiles and electronic structures of a novel quantum ring capped by a material different from the substrate. By comparing the novel quantum ring with an ordinary quantum dot and quantum ring, which are capped by the same material as the substrate, we find that the novel quantum ring exhibits noticeably different properties, such as an anomalous strain relaxation, band alignments, and blueshift of the emission energy. We investigate the novel properties of our quantum ring by separating the ring evolution process into (i) the step of geometric change from a dot to ring and (ii) the step of GaAs capping. The GaAs embedded in the Ino.53Gao.47As matrix provides sufficient space for the relaxation of InAs and, thus, individual strain and biaxial strain of the InAs ring are considerably reduced by the GaAs layer. We show that the blueshift in the emission energies due to ring formation is mainly caused by (i) the geometric change from a dot to ring and (ii) the weakened heavy hole-light hole splitting, and not by the enhanced compressive strain. The relaxation of the ring along the radial direction also considerably enhances the shear strain and piezoelectric potential, and the piezoelectric potential partially compensates for the blueshift resulting from the ring evolution and GaAs capping. We also show that the tensile-strained GaAs selectively acts as a potential well for light holes and as potential barriers for both the electrons and heavy holes. As a consequence, the GaAs layer considerably enhances the light-hole character of the hole states in our quantum ring.
机译：我们研究了由与基底不同的材料覆盖的新型量子环的应变曲线和电子结构。通过将新型量子环与由与基板相同材料覆盖的普通量子点和量子环进行比较，我们发现新型量子环表现出明显不同的性质，例如异常应变松弛，能带排列和蓝移的发射能量。我们通过将环演化过程分为（i）从点到环的几何变化步骤和（ii）GaAs封盖步骤，来研究量子环的新颖性质。嵌入Ino.53Gao.47As矩阵中的GaAs为InAs的弛豫提供了足够的空间，因此，GaAs层大大降低了InAs环的单个应变和双轴应变。我们表明，由于形成环而导致的发射能量的蓝移主要是由于（i）从点到环的几何变化和（ii）弱重孔-轻孔分裂减弱，而不是由增强的压缩应变引起的。环沿径向方向的松弛也显着增强了剪切应变和压电势，并且压电势部分补偿了由环演化和GaAs封盖导致的蓝移。我们还表明，拉伸应变的GaAs选择性地充当轻空穴的势阱以及电子和重空穴的势垒。结果，GaAs层大大增强了我们量子环中空穴态的光洞特性。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.502-514|共13页
  • 作者

    Pilkyung Moon; Jun Choi; Kwangmin Park; Euijoon Yoon; JaeDong Lee;

  • 作者单位

    Schools of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa, 923-1292, Japan;

    Nano Convergence Devices Center, Interdisciplinary Fusion Technology.Division, Korea Institute of Science and Technology, Seoul, 136-791, Korea;

    Compound Semiconductor Epitaxy Laboratory, Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea;

    Compound Semiconductor Epitaxy Laboratory, Department of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea;

    Schools of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa, 923-1292, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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