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首页> 外文期刊>Journal of Applied Physics >Vertical transport through GaAs/lnGaP multi-quantum-wells p-i-n diode with evidence of tunneling effects
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Vertical transport through GaAs/lnGaP multi-quantum-wells p-i-n diode with evidence of tunneling effects

机译：通过GaAs / InGaP多量子阱p-i-n二极管的垂直传输并具有隧穿效应

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摘要

Vertical transport in p-i-n diodes containing InGaP/GaAs multi-quantum-wells (MQW) is investigated using current-voltage measurements under forward bias at different temperatures. At low injection, the experimental data are analyzed through a two diode model, by taking into account the non-complete depletion of the MQW region caused by unintentional p-type doping. The diffusion current results to be dominant at high temperatures, whereas the current due to non-radiative recombination through defects in the space charge region becomes more and more relevant as the temperature is reduced. At temperatures above T=150 K and at high forward voltages, when the current is limited by the series resistance, the thermionic emission of holes over the InGaP barriers controls the transport through the whole MQW region. At lower temperatures resonant tunneling of holes takes place and a simple picture of the hole quantum levels permits to interpret the main details of the I(V) curves at T = 41 K, by supporting the hypothesis of a uniform electric field in the MQW region up to about 100 kV/cm.
机译：使用电流-电压测量在不同温度下的正向偏置下，研究了包含InGaP / GaAs多量子阱（MQW）的p-i-n二极管中的垂直传输。在低注入时，考虑到由无意的p型掺杂引起的MQW区域的不完全耗尽，通过两个二极管模型分析了实验数据。扩散电流在高温下占主导地位，而随着温度降低，由于通过空间电荷区中的缺陷进行的非辐射复合而产生的电流变得越来越重要。在高于T = 150 K的温度和高正向电压下，当电流受到串联电阻的限制时，InGaP势垒上方空穴的热电子发射会控制整个MQW区域的传输。在较低的温度下，会发生空穴的共振隧穿，并且通过支持MQW区域中均匀电场的假设，空穴量子能级的简单图片可以解释T = 41 K时I（V）曲线的主要细节。高达约100 kV / cm。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.103704.1-103704.10|共10页
  • 作者

    Enos Gombia; Antonella Parisini; Carlo Ghezzi; Luciano Tarricone; Michele Baldini; Salvatore Vantaggio;

  • 作者单位

    CNR-IMEM, Parco Area delle Scienze 37/A - 43010, Loc.Fontanini-Parma, Italy;

    SEM LABS-CNISM-Dipartimento di Fisica, Universita di Parma, V.le G.P. Usberti, 7/A, 43124, Parma, Italy;

    SEM LABS-CNISM-Dipartimento di Fisica, Universita di Parma, V.le G.P. Usberti, 7/A, 43124, Parma, Italy;

    SEM LABS-CNISM-Dipartimento di Fisica, Universita di Parma, V.le G.P. Usberti, 7/A, 43124, Parma, Italy;

    CNR-IMEM, Parco Area delle Scienze 37/A - 43010, Loc.Fontanini-Parma, Italy;

    SEM LABS-CNISM-Dipartimento di Fisica, Universita di Parma, V.le G.P. Usberti, 7/A, 43124, Parma, Italy;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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