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首页> 外文期刊>Journal of Applied Physics >Phosphorus Ion Implantation In Silicon Nanocrystals Embedded In Sio_2
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Phosphorus Ion Implantation In Silicon Nanocrystals Embedded In Sio_2

机译：Sio_2中嵌入的硅纳米晶中的磷离子注入

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摘要

We have investigated phosphorus ion (P~+) implantation in Si nanocrystals (SiNCs) embedded in SiO_2, in order to clarify the P donor doping effects for photoluminescence (PL) of SiNCs in wide P concentrations ranging in three orders. Some types of defects such as P_b centers were found to remain significantly at the interfaces between SiNCs and the surrounding SiO_2 even by high-temperature (1000 ℃) annealing of all the samples. Hydrogen atom treatment (HAT) method can efficiently passivate remaining interface defects, leading to significant increase in the intensity of PL arising from the recombination of electron-hole pairs confined in SiNCs, in addition to significant decrease in interface defects with dangling bonds detected by electron spin resonance. From both the results of the P dose dependence before and after HAT, it is found that the amount of remaining defects is higher for samples with SiNCs damaged by implantation with relatively lower P~+ doses and then annealed, and that through HAT the observed PL intensity increases surely as the P concentration increases up to a critical concentration. Then it begins to decrease due to Auger nonradiative recombination above the critical concentration which depends on the size of SiNCs. These results suggest an effect of relatively low concentration of P atoms for the enhancement of PL intensity of SiNCs and we present an unconventional idea for explaining it.
机译：我们研究了磷离子（P〜+）在SiO_2中嵌入的Si纳米晶体（SiNCs）中的注入，以阐明在三个数量级的宽P浓度下SiNCs的光致发光（PL）的P供体掺杂效应。即使通过所有样品的高温（1000℃）退火，也发现某些类型的缺陷（例如P_b中心）仍明显保留在SiNC与周围SiO_2之间的界面上。氢原子处理（HAT）方法可以有效地钝化剩余的界面缺陷，不仅可以显着减少由电子检测到的悬空键引起的界面缺陷，而且可以有效地钝化残留在SiNCs中的电子-空穴对，从而提高PL的强度。自旋共振。从HAT前后P剂量依赖性的结果来看，发现具有较低P〜+剂量注入然后退火的SiNC样品的残留缺陷量更高，而通过HAT观察到的PL随着P浓度增加到临界浓度，强度肯定增加。然后，由于俄歇非辐射复合超过临界浓度而开始降低，临界浓度取决于SiNC的大小。这些结果表明，较低浓度的P原子可增强SiNC的PL强度，因此我们提出了一种非常规的解释方法。

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