...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation
【24h】

Off-centered polarization and ferroelectric phase transition in Li-doped ZnO thin films grown by pulsed-laser ablation

机译：脉冲激光烧蚀生长的掺锂ZnO薄膜的偏心极化和铁电相变

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Li-doped ZnO (Zn_(1-x)Li_xO, x = 0.15) thin films have been grown on platinum-coated silicon substrates via pulsed-laser ablation. The films were grown at fixed substrate temperature of 500℃ and different partial pressure of oxygen (PO_2 ～100-300 mTorr). The films showed (002) preferred orientation. The doping concentration and built-in potential were estimated from the capacitance-voltage characteristics. In order to investigate the phase transition behavior of the films, dc conductivity and dielectric measurements were conducted. The phase transition temperature was found to be 330 K. The activation energy (dc) has been found to be 0.05 and 0.28 eV in ferroelectric and paraelectric phases, respectively. The Zn_(0.85)Li_(0.15)O thin films exhibited well-defined polarization hysteresis loop, with a remanent polarization of 0.2 μC/cm~2 and coercive field of 25 kV/cm, at room temperature. The conduction mechanism of the laser ablated Zn_(0.85)Li_(0.15)O films was analyzed in the light of impedance spectroscopy.
机译：通过脉冲激光烧蚀在掺铂的硅基板上生长了掺锂的ZnO（Zn_（1-x）Li_xO，x = 0.15）薄膜。在固定的衬底温度500℃和不同的氧气分压（PO_2〜100-300 mTorr）下生长薄膜。膜显示（002）优选的取向。根据电容-电压特性估算掺杂浓度和内建电势。为了研究薄膜的相变行为，进行了直流电导率和介电测量。发现相变温度为330K。在铁电和顺电相中，活化能（dc）分别为0.05和0.28 eV。 Zn_（0.85）Li_（0.15）O薄膜在室温下具有清晰的极化磁滞回线，剩余极化率为0.2μC/ cm〜2，矫顽场为25 kV / cm。利用阻抗谱分析了激光烧蚀Zn_（0.85）Li_（0.15）O薄膜的导电机理。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号