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首页> 外文期刊>Journal of Applied Physics >Low-frequency 1/f noise of RuO_2-glass thick resistive films
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Low-frequency 1/f noise of RuO_2-glass thick resistive films

机译：RuO_2玻璃厚电阻膜的低频1 / f噪声

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摘要

Measurements of low-frequency noise in thick-film resistors at low temperatures are reported. Films were prepared in a standard "high temperature" process: 20 nm sized RuO_2 powder was mixed with 0.5 μm granular lead-borosilicate glass and organic solvent to give a paste, which was then screen printed onto alumina substrates and fired in a tunnel furnace. Measurements below liquid helium temperature reveal that the low frequency (1/f) noise increases with decreasing temperature, approximately asT~(-α), α= 2.1 ± 0.1. Up to 4 T no dependence of noise intensity on magnetic field has been observed. Measurements of noise spectra in the range 4-300 K show that spectral and temperature slopes obey Dutta, Dimon, and Horn equation [Phys. Rev. Lett. 43, 646 (1979)] only in the range T ＞ 10 K. Below this temperature a gap of constant width opens between noise exponent calculated from the spectral slope and from temperature dependence of noise magnitude. This gap occurs due to the change of noise coupling mechanism that takes place at ≈ 10 K. At higher temperatures this coupling is temperature independent. At lower temperatures coupling becomes temperature dependent. It is shown that data agree quantitatively with the concept that noise sources modulate energies for thermally activated hops in the percolation network.
机译：报道了在低温下测量厚膜电阻器中低频噪声的方法。以标准的“高温”方法制备薄膜：将20 nm尺寸的RuO_2粉末与0.5μm的颗粒状硼硅酸铅玻璃和有机溶剂混合，得到糊状物，然后将其丝网印刷到氧化铝基板上，并在隧道式炉中进行焙烧。在液氦温度以下的测量结果表明，低频（1 / f）噪声随温度降低而增加，大约为T〜（-α），α= 2.1±0.1。直到4 T，都没有观察到噪声强度对磁场的依赖性。在4-300 K范围内的噪声频谱测量结果表明，频谱和温度斜率符合Dutta，Dimon和Horn方程[Phys。牧师43，646（1979）]仅在T＞ 10 K范围内。在此温度以下，在由频谱斜率和噪声幅度与温度的关系所计算出的噪声指数之间会打开一个恒定宽度的间隙。该间隙是由于在≈10 K时发生的噪声耦合机制的变化而产生的。在较高温度下，此耦合与温度无关。在较低温度下，耦合变得取决于温度。结果表明，数据与渗滤网络中噪声源为热激活啤酒花调制能量的概念定量吻合。

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