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首页> 外文期刊>Journal of Applied Physics >Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate
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Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate

机译:阴极发光光谱的温度依赖性和在台面结构Si衬底上生长的GaN层的应力分析

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摘要

The temperature dependence of cathodoluminescence (CL) spectra is measured on n-GaN grown on a Si (111) substrate patterned by deep etching in the temperature range 6-280 K. The temperature dependence of the peak energy of A free exciton (FXA) and its 1LO and 2LO phonon replicas are obtained. The stress distribution from corner to center in the patterned mesa area at low temperature 10 K is estimated roughly by FXA energy using a line scanning measurement of the CL spectra. The maximum tensile stress at a point far from the mesa edge is about 0.6 GPa and relaxed to 0.1 GPa at the corner. The relaxation distance extends to about 40 μm.
机译:阴极发光(CL)光谱的温度依赖性是在生长于6-280 K温度范围内通过深蚀刻图案化的Si(111)衬底上生长的n-GaN上测量的。并获得其1LO和2LO声子副本。使用CL光谱的线扫描测量,通过FXA能量粗略估计了10 K低温下图案化台面区域中从拐角到中心的应力分布。远离台面边缘的点处的最大拉应力约为0.6 GPa,并在拐角处松弛至0.1 GPa。弛豫距离延伸至约40μm。

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