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Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates

机译：在ZnO衬底上InGaN层的金属有机化学气相沉积

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InGaN layers have been grown on (0001) ZnO substrates by metalorganic chemical vapor deposition utilizing a low temperature grown thin GaN buffer. Good quality InGaN films with a wide range of In composition were confirmed by high-resolution x-ray diffraction. Even at high indium concentrations no In droplets and phase separation appeared, possibly due to coherent growth of InGaN on ZnO. Photoluminescence showed broad InGaN-related emissions with peak energy lower than the calculated InGaN band gap, possibly due to Zn/O impurities diffused into InGaN from the ZnO substrate. An activation energy of 59 meV for the InGaN epilayer is determined.

机译：通过使用低温生长的薄GaN缓冲液通过有机金属化学气相沉积在（0001）ZnO衬底上生长InGaN层。通过高分辨率X射线衍射证实了具有宽In组成的高质量InGaN膜。即使在高铟浓度下，也不会出现In小滴和相分离，这可能是由于InGaN在ZnO上的相干生长所致。光致发光显示宽泛的InGaN相关发射，其峰值能量低于计算出的InGaN带隙，这可能是由于Zn / O杂质从ZnO衬底扩散到InGaN中。确定了InGaN外延层的激活能量为59 meV。

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来源
《Journal of Applied Physics》 |2007年第10期|p.106105.1-106105.3|共3页
作者
Shen-Jie Wang; Nola Li; Eun-Hyun Park; Siou-Cheng Lien; Zhe Chuan Feng; Adriana Valencia; Jeff Nause; Ian Ferguson;
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作者单位

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta,Georgia 30332-0250, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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1. High-Quality ZnO Layers Grown on 6H-SiC Substrates by Metalorganic Chemical Vapor Deposition [J] . A. B. M. Almamun ASHRAFI, Bao-ping ZHANG, Naguyen Thanh BINH, Japanese Journal of Applied Physics. Part 1, Regular Papers & Short Notes . 2004,第3期

机译：金属有机化学气相沉积法在6H-SiC衬底上生长高质量ZnO层
2. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition [J] . Shuo Zhang, Ping Ma, Boting Liu, AIP Advances . 2016,第6期

机译：通过金属有机化学气相沉积法对InGaN进行周期性生长和原位退火获得的高电阻层
3. Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition [J] . Kadys A., Malinauskas T., Grinys T., Journal of Electronic Materials . 2015,第1期

机译：通过脉冲金属有机化学气相沉积法在GaN模板上生长InN和In-In-In-InGaN层
4. Metalorganic Chemical Vapor Deposition of GaN and InGaN on ZnO Substrate using Al_2O_3 as a Transition Layer [C] . Nola Li, Shen-Jie Wang, Chung-Lung Huang, International conference on solid state lighting . 2008

机译：以Al_2O_3为过渡层的ZnO衬底上的GaN和InGaN的金属有机化学气相沉积
5. Growth and characterization of metalorganic chemical vapor deposition InGaN. [D] . Piner, Edwin Lanier. 1998

机译：金属有机化学气相沉积InGaN的生长和表征。
6. NO gas sensor based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition [O] . Min-Ru Wu, Wei-Zhong Li, Chun-Yi Tung, -1

机译：金属有机化学气相沉积生长基于ZnGa2O4外延层的NO气体传感器
7. High-resistive layers obtained through periodic growth and in situ annealing of InGaN by metalorganic chemical vapor deposition [O] . Shuo Zhang, Ping Ma, Boting Liu, 2016

机译：通过金属有机化学气相沉积的InGaN的周期性生长和原位退火获得的高电阻层

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