Low electron mobility of field-effect transistor determined by modulated magnetoresistance

R. Tauk; J. Lusakowski; W. Knap; A. Tiberj; Z. Bougrioua; M. Azize; P. Lorenzini; M. Sakowicz; K. Karpierz; C. Fenouillet-Beranger; M. Casse; C. Gallon; F. Boeuf; T. Skotnicki

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Low electron mobility of field-effect transistor determined by modulated magnetoresistance

机译：调制磁阻决定场效应晶体管的低电子迁移率

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Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T, It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.

机译：在高达10 T的磁场中对场效应晶体管进行了室温磁传输实验，结果表明，通过测量晶体管磁阻及其相对于栅极电压的一阶导数，可以推导栅极部分的电子迁移率不需要知道晶体管的沟道电阻，访问/接触电阻和晶体管栅极长度。我们展示了使用GaN和Si场效应晶体管的这种方法的潜力，并讨论了其对于具有纳米栅极长度的晶体管中迁移率测量的重要性。

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来源
《Journal of Applied Physics》 |2007年第10期|p.103701.1-103701.7|共7页
作者
R. Tauk; J. Lusakowski; W. Knap; A. Tiberj; Z. Bougrioua; M. Azize; P. Lorenzini; M. Sakowicz; K. Karpierz; C. Fenouillet-Beranger; M. Casse; C. Gallon; F. Boeuf; T. Skotnicki;
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作者单位

GES CNRS—UMR 5650, Universite Montpellier 2, Place E. Bataillon, 34950 Montpellier, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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4. Epitaxially grown graphene field-effect transistors with electron mobility exceeding 1500cm{sup}2/Vs and hole mobility exceeding 3400cm{sup}2/Vs [C] . Yanqing Wu, Peide D. Ye, Michael A. Capano, International Semiconductor Device Research Symposium . 2007

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8. Analysis of the Effects of Low Energy Electron Radiation of Al(sub x) Ga(sub 1-x)N/GaN Modulation-Doped Field-Effect Transistors [R] . Sattler, J. M. 2004

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Low electron mobility of field-effect transistor determined by modulated magnetoresistance

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