Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications

Lin Edward L.; Posadas Agham B.; Zheng Lu; Ortmann J. Elliott; Abel Stefan; Fompeyrine Jean; Lai Keji; Demkov Alexander A.; Ekerdt John G.

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Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications

机译：基于Si（001）外延铁电钡的原子层沉积，用于电子和光子应用

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Epitaxial barium titanate (BTO) thin films are grown on strontium titanate-buffered Si(001) using atomic layer deposition (ALD) at 225 degrees C. X-ray diffraction confirms compressive strain in BTO films after the low temperature growth for films as thick as 66nm, with the BTO c-axis oriented in the out-of-plane direction. Postdeposition annealing above 650 degrees C leads to an in-plane c-axis orientation. Piezoresponse force microscopy was used to verify the ferroelectric switching behavior of ALD-grown films. Electrical and electro-optic measurements confirm BTO film ferroelectric behavior in out-of-plane and in-plane directions, respectively, at the micrometer scale.

机译：在225℃的原子层沉积（ALD）在225℃下，在钛酸锶缓冲Si（001）上生长在钛酸锶缓冲的Si（001）上。X射线衍射在低温生长后确认BTO薄膜中的压缩菌株为厚度为66nm，与平面外方向取向BTO C轴。在650度以上的后沉积退火导致面内C轴取向。压电响应力显微镜用于验证ALD生长薄膜的铁电切换行为。电气和电光测量分别在千分尺刻度上分别在平面外和面内方向上确认BTO膜铁电行为。

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来源
《Journal of Applied Physics》 |2019年第6期|064101.1-064101.9|共9页
作者
Lin Edward L.; Posadas Agham B.; Zheng Lu; Ortmann J. Elliott; Abel Stefan; Fompeyrine Jean; Lai Keji; Demkov Alexander A.; Ekerdt John G.;
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作者单位

Univ Texas Austin Dept Chem Engn Austin TX 78712 USA|Lam Res Corp Fremont CA 94538 USA;

Univ Texas Austin Dept Phys Austin TX 78712 USA;

Univ Texas Austin Dept Phys Austin TX 78712 USA;

Univ Texas Austin Dept Phys Austin TX 78712 USA;

IBM Res Zurich CH-8803 Ruschlikon Switzerland;

IBM Res Zurich CH-8803 Ruschlikon Switzerland;

Univ Texas Austin Dept Phys Austin TX 78712 USA;

Univ Texas Austin Dept Phys Austin TX 78712 USA;

Univ Texas Austin Dept Chem Engn Austin TX 78712 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
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入库时间 2022-08-18 22:17:05

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1. Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications [J] . Lin Edward L., Posadas Agham B., Zheng Lu, Journal of Applied Physics . 2019,第6期

机译：电子和光子应用在Si（001）上外延铁电钛酸钡的原子层沉积
2. Polarization control of epitaxial barium titanate (BaTiO_3) grown by pulsed-laser deposition on a MBE-SrTiO_3/Si(001) pseudo-substrate [J] . Trsang-Hsuan Wang, Po-Chun (Brent) Hsu, Maxim Korytov, Journal of Applied Physics . 2020,第10期

机译：在MBE-SRTIO_3 / Si（001）伪衬底上通过脉冲激光沉积生长的外延钡（BATIO_3）的偏振控制
3. Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp(2) layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum [J] . Apostol Nicoleta Georgiana, Lizzit Daniel, Lungu George Adrian, RSC Advances . 2020,第3期

机译：抗性滞后与原子SP（2）层中的同步辐射表面研究相关，在铁电（001）锆中合成的碳含量在超高真空中
4. SCALE-UP OF THE BARIUM TITANATE ATOMIC LAYER DEPOSITION PROCESS ONTO 200 MM WAFER [C] . R. Matero, A. Rahtu, S. Haukka, Electrochemical Society . 2006

机译：钛酸钡原子层沉积工艺的缩放到200mm晶片上
5. Atomic Layer Deposition of Tin Titanate - Achieving Ferroelectricity and Beyond [D] . Chang, Siliang. 2018

机译：钛酸锡的原子层沉积-实现铁电及其他
6. Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition [O] . Edward L. Lin, Bryce I. Edmondson, Shen Hu, 2016

机译：通过原子层沉积在钛锗上外延生长钙钛矿锶钛酸盐
7. Resistance hysteresis correlated with synchrotron radiation surface studies in atomic sp2 layers of carbon synthesized on ferroelectric (001) lead zirconate titanate in an ultrahigh vacuum [O] . Nicoleta Georgiana Apostol, Daniel Lizzit, George Adrian Lungu, 2020

机译：抗性滞后与在铁电（001）中合成的原子SP2层中的同步SP2层中的同步辐射表面研究相关联锆钛酸盐在超高真空中
8. Deposition of Device Quality Epitaxial Layers of Gallium Nitride and Indium Nitride for Electronic Applications [R] . Francis, D. B. 1987

机译：电子应用中氮化镓和氮化铟器件质量外延层的沉积

Atomic layer deposition of epitaxial ferroelectric barium titanate on Si(001) for electronic and photonic applications

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