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首页> 外文期刊>Journal of Applied Physics >Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)
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Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)

机译：在4H-SiC上化学气相沉积生长的石墨烯的氮掺杂（0001）

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摘要

We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N2 as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 1012 cm−2 was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.
机译：我们介绍了使用丙烷作为碳前驱体和N2作为氮源通过化学气相沉积法在4H-SiC（0001）的Si面上生长的氮掺杂石墨烯的光学，电学和结构性质。通过X射线光电子能谱确认了氮在碳晶格中的结合。角分辨光发射光谱法显示了无质量狄拉克费米子的载流子行为特征，并证实了所研究的氮掺杂样品中存在石墨烯单层。通过拉曼光谱研究了该材料的结构和电子性能。对石墨烯拉曼光谱（包括D，G和2D谱带）进行了系统分析。对于掺杂氮的样品，根据拉曼和霍尔效应测量估计电子浓度约为5–10×10 12 cm -2 观察到生长过程中载体浓度对氮浓度的明显依赖性。可以将这种高电子浓度解释为是由于在石墨烯晶格的石墨状位置中存在氮以及与底物的相互作用。对于掺氮样品，观察到更高的拉曼D谱带强度和不均匀性增加，以及电子迁移率降低，表明形成了缺陷，并改变了氮掺杂引起的生长过程。

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