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首页> 外文期刊>Journal of Applied Physics >Optical and electrical characterization of multiply doped silicon: A study of the Si:(In,Al) system
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Optical and electrical characterization of multiply doped silicon: A study of the Si:(In,Al) system

机译：多掺杂硅的光学和电学特性：Si：（In，Al）系统的研究

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摘要

Photoluminescence, infrared absorption, high‐resolution photoconductivity, and Hall effect transport measurements have been used to study the optical and electrical properties of silicon single crystals grown by the float‐zone method, which were intentionally doped with indium and aluminum. Indium‐bound exciton luminescence, as well as strong U2 luminescence from isoelectronic traps, were observed in the as‐grown material. However, despite a high concentration of Al in these samples, no aluminum bound exciton luminescence was observed. Exciton tunneling from Al to In bound states is believed responsible for the quenching of the Al luminescence. No photoluminescence from Al‐related isoelectronic centers was detected, suggesting that In‐related centers form preferentially. No X‐levels were detected by Hall, absorption, or photoconductivity measurements before nor after electron irradiation and thermal annealing.
机译：光致发光，红外吸收，高分辨率光电导率和霍尔效应传输测量已用于研究通过浮区法生长的，故意掺有铟和铝的硅单晶的光学和电学性质。在生长的材料中观察到铟结合的激子发光以及来自等电子阱的强U2发光。然而，尽管这些样品中的铝浓度很高，但未观察到铝结合的激子发光。从Al到In键合态的激子隧穿被认为是导致Al发光的猝灭的原因。没有检测到与铝有关的等电子中心的光致发光，这表明与铟有关的中心优先形成。在电子辐照和热退火前后，霍尔，吸收或光电导率测量均未检测到X值。

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    《Journal of Applied Physics》 |1982年第12期|P.8793-8797|共5页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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