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Thin germanium nitride films grown by thermal reaction process

机译:通过热反应工艺生长的氮化锗薄膜

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Thin films have been grown on 〈111〉 germanium by thermal nitridation. The surface morphology, composition, thickness, and refractive index of the films have been investigated. Compositional analysis was performed by electron beam x‐ray microanalysis which indicates that the films contain oxygen as well as nitrogen and have a nitrogen to oxygen ratio on the order of 2.5:1. Film thickness and refractive index were determined by ellipsometry. The thicknesses ranged from 60 to 150 Å, and the refractive indices ranged from 1.5 to 2.3 depending on growth parameters. A universal chart for evaluating the thickness and refractive index of dielectric films on germanium from the ellipsometric parameters ψ and Δ is also presented.
机译:薄膜已通过热氮化在〈111〉锗上生长。已经研究了膜的表面形态,组成,厚度和折射率。通过电子束X射线微分析进行成分分析,结果表明该膜同时包含氧气和氮气,并且氮气与氧气的比例约为2.5:1。膜厚和折射率通过椭圆偏振法测定。根据生长参数,厚度范围为60至150,折射率范围为1.5至2.3。还提供了用于从椭偏参数ψ和Δ评估锗上介电膜厚度和折射率的通用图表。

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    《Journal of Applied Physics》 |1982年第12期|P.8969-8973|共5页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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