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首页> 外文期刊>Journal of Applied Physics >Defect formation chemistry of EL2 center at Ec-0.83 eV in ion‐implanted gallium arsenide
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Defect formation chemistry of EL2 center at Ec-0.83 eV in ion‐implanted gallium arsenide

机译：离子注入砷化镓中EL2中心在Ec-0.83 eV处的缺陷形成化学

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Deep level defects after annealing were investigated for horizontal Bridgman GaAs implanted with donor species (Si, S, Se) and with a combination of these donors and oxygen. It was demonstrated that the EL2 defect level at Ec-0.83 eV and its concentration were identical for both cases, implanted with and without oxygen, and that oxygen could not be involved in the formation of EL2. Based upon the assumption of stoichiometry balance, a possible model for defect formation mechanism was constructed by considering diffusion and chemical reactions during ion implantation and annealing process. Using this model, the EL2 center may be assigned to a simple antisite defect—As in a Ga site if no complexes of higher orders were assumed to form. The model predicts that the donor impurities act as a catalyst during the formation of the EL2 defect but are not involved in the actual coordination of the defect or complex formation. Finally, the defect concentration profiles were shown to be controlled by the resulted stoichiometry deviation due to implantation and by different diffusivity of the implanted species as predicted by our model.
机译：研究了水平布里奇曼砷化镓退火后的深层缺陷，该水平布里奇曼砷化镓注入了施主物质（Si，S，Se），并结合了这些施主和氧气。结果表明，在两种情况下，无论有无氧气注入，ELc在Ec-0.83 eV处的缺陷水平及其浓度都相同，并且氧气不能参与EL2的形成。基于化学计量平衡的假设，通过考虑离子注入和退火过程中的扩散和化学反应，构建了可能的缺陷形成机理模型。使用此模型，可以将EL2中心分配给一个简单的反位缺陷-如果假设不形成更高阶的复合物，则与Ga位点一样。该模型预测供体杂质在EL2缺陷形成期间充当催化剂，但不参与缺陷或复合物形成的实际配位。最终，缺陷浓度分布显示出受所导致的由于注入引起的化学计量偏差以及如我们的模型所预测的那样受注入物质的不同扩散率控制。

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    《Journal of Applied Physics》 |1982年第12期|P.8653-8662|共10页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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