Exact analytical solution to the electron density for monolayer and bilayergraphene

Selvaggi Jerry P.

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Exact analytical solution to the electron density for monolayer and bilayergraphene

机译：精确分析单层和双层石墨烯电子密度的方法

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This article presents a mathematical method for analytically evaluating the electron density for both monolayer and bilayer graphene. Once an appropriate probability function is chosen for finding the electronic density of states, a complete analytical solution is found for the electronic density without recourse to any analytical approximations or asymptotic formulations. The form of the solution is in terms of a convergent series involving the complementary error function. The analytical solution developed in this paper is valid for all temperatures and for all Fermi energies greater than or equal to zero. The method is easily extended to include Fermi energies less than zero.

机译：本文提出了一种数学方法，用于分析评估单层和双层石墨烯的电子密度。一旦选择了合适的概率函数来找到状态的电子密度，就可以找到电子密度的完整分析解决方案，而无需求助于任何分析近似或渐近公式。解决方案的形式是涉及互补误差函数的收敛级数。本文开发的分析解决方案适用于所有温度以及所有大于或等于零的费米能量。该方法很容易扩展到包括小于零的费米能量。

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来源
《Journal of Computational Electronics》 |2018年第2期|491-498|共8页
作者
Selvaggi Jerry P.;
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作者单位

Rensselaer Polytech Inst, Troy, NY 12180 USA;

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正文语种 eng
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Organic materials; Charge carrier density; Gaussian distribution; Fermi-Dirac integral; Error functions; Density of states;

机译：有机材料电荷载流子密度高斯分布费米-狄拉克积分误差函数状态密度;

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Exact analytical solution to the electron density for monolayer and bilayergraphene

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