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首页> 外文期刊>Journal of Computational Electronics >Modeling and simulation of a graphene-based three-terminal junction rectifier
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Modeling and simulation of a graphene-based three-terminal junction rectifier

机译：基于石墨烯的三端结整流器的建模与仿真

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In this paper, we demonstrate the simulation of a graphene-based three-terminal junction using semi-classical drift-diffusion modeling. The DC and AC simulations are carried out separately and characterized at different temperatures and frequencies. The simulated structure is compared with previous results, and the noise spectrum is simulated to explore its behavior using graphene as an active region. At room temperature, the three-terminal junction demonstrates responsivity of up to 594.56 mV/mW, with mobility of 4000 cm(2)/Vs and a push-pull input signal of 100 mV at 1 KHz. The corresponding noise-equivalent power is as low as 19.4 pW/Hz(1/2). The simulated structure is able to obtain much higher responsivity and lower noise equivalent power by taking advantage of the higher mobility of the graphene. The voltage noise spectrum of the device is analyzed using equivalent two-dimensional geometry. At lower frequencies, flicker noise is found to dominate, due to the variation in charge carrier density.
机译：在本文中，我们演示了使用半经典漂移扩散模型对基于石墨烯的三端结进行的仿真。直流和交流仿真分别进行，并在不同的温度和频率下进行表征。将模拟的结构与先前的结果进行了比较，并使用石墨烯作为有源区，对噪声谱进行了模拟，以探索其行为。在室温下，三端结表现出高达594.56 mV / mW的响应度，迁移率为4000 cm（2）/ Vs，在1 KHz时的推挽输入信号为100 mV。相应的等效噪声功率低至19.4 pW / Hz（1/2）。通过利用石墨烯的更高迁移率，模拟结构能够获得更高的响应度和更低的噪声等效功率。使用等效的二维几何结构分析设备的电压噪声频谱。在较低的频率下，由于电荷载流子密度的变化，闪烁噪声占主导地位。

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