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首页> 外文期刊>Journal of Computational Electronics >Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with N~+-P~(-) junction
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Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with N~+-P~(-) junction

机译：具有出色性能的单极结型晶体管的分析和建模：具有N〜+ -P〜（-）结的新型DG MOSFET

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摘要

We propose herein a new dual-gate metal-oxide-semiconductor field-effect transistor (MOSFET) with just a unipolar junction (UJ-DG MOSFET) on the source side. The UJ-DG MOSFET structure is constructed from an N+ region on the source side with the rest consisting of a P- region over the gate and drain, forming an auxiliary gate over the drain region with appropriate length and work function (named A-gate), converting the drain to an N+ region. The new structure behaves as a MOSFET, exhibiting better efficiency than the conventional double-gate MOSFET (C-DG MOSFET) thanks to the modified electric field. The amended electric field offers advantages including improved electrical characteristics, reliability, leakage current, I-ON/I-OFF ratio, gate-induced drain leakage, and electron temperature. Two-dimensional analytical models of the surface potential and electric field over the channel and drain are applied to investigate the drain current in the UT-DG MOSFET. To confirm their accuracy, the MOSFET characteristics obtained using the 2D Atlas simulator for the UJ-DG and C-DG are analyzed and compared.
机译：我们在这里提出一种新的双栅极金属氧化物半导体场效应晶体管（MOSFET），其源极侧只有一个单极结（UJ-DG MOSFET）。 UJ-DG MOSFET结构由源极侧的N +区域构成，其余部分由栅极和漏极上方的P-区域组成，在漏极区域上方形成具有适当长度和功函数的辅助栅极（称为A栅极） ），将漏极转换为N +区。新结构具有MOSFET的功能，由于电场的改变，其效率比传统的双栅MOSFET（C-DG MOSFET）高。修改后的电场提供的优势包括改善的电气特性，可靠性，泄漏电流，I-ON / I-OFF比，栅极感应的漏极泄漏和电子温度。应用沟道和漏极上的表面电势和电场的二维分析模型来研究UT-DG MOSFET中的漏极电流。为了确认其准确性，分析并比较了使用2D Atlas仿真器为UJ-DG和C-DG获得的MOSFET特性。

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