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首页> 外文期刊>Journal of Computational Neuroscience >Synaptic conditions for auto-associative memory storage and pattern completion in Jensen et al.'s model of hippocampal area CA3
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Synaptic conditions for auto-associative memory storage and pattern completion in Jensen et al.'s model of hippocampal area CA3

机译：在Jensen等人的海马区CA3模型中，自动联想记忆和模式完成的突触条件

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Jensen et al. (Learn Memory 3(2-3):243-256, 1996b) proposed an auto-associative memory model us ing an integrated short-term memory (STM) and long term memory (LTM) spiking neural network. Their model requires that distinct pyramidal cells encoding different STM patterns are fired in different high-frequency gamma subcycles within each low-frequency theta oscillation. Auto-associative LTM is formed by modifying the recurrent synaptic efficacy between pyra midal cells. In order to store auto-associative LTM cor rectly, the recurrent synaptic efficacy must be bounded. The synaptic efficacy must be upper bounded to pre vent re-firing of pyramidal cells in subsequent gamma subcycles. If cells encoding one memory item were to re-fire synchronously with other cells encoding another item in subsequent gamma subcycle, LTM stored via modifiable recurrent synapses would be corrupted. The synaptic efficacy must also be lower bounded so that memory pattern completion can be performed cor rectly. This paper uses the original model by Jensen et al. as the basis to illustrate the following points. Firstly, the importance of coordinated long-term mem ory (LTM) synaptic modification. Secondly, the use of a generic mathematical formulation (spiking response model) that can theoretically extend the results to other spiking network utilizing threshold-fire spiking neuron model. Thirdly, the interaction of long-term and short-term memory networks that possibly explains the asymmetric distribution of spike density in theta cycle through the merger of STM patterns with interaction of LTM network.
机译：Jensen等。 （Learn Memory 3（2-3）：243-256，1996b）使用集成的短期记忆（STM）和长期记忆（LTM）峰值神经网络提出了一种自动联想记忆模型。他们的模型要求在每个低频theta振荡内，在不同的高频gamma子周期中发射编码不同STM模式的截然不同的锥体细胞。自缔合LTM是通过修饰吡喃中性细胞之间的复发性突触功效而形成的。为了正确存储自缔合LTM，必须限制复发性突触功效。突触效力必须达到上限，以防止随后的γ亚周期中锥体细胞的重新点燃。如果在随后的伽马子周期中编码一个存储项的单元与编码另一项的其他单元同步重新触发，则通过可修改的循环突触存储的LTM将被破坏。突触功效也必须下限，以便可以正确执行记忆模式的完成。本文使用Jensen等人的原始模型。作为基础来说明以下几点。首先，协调长期记忆（LTM）突触修饰的重要性。其次，使用通用数学公式（加标响应模型），该公式可以在理论上将结果扩展到其他使用阈值加标加标神经元模型的加标网络。第三，长期和短期记忆网络的相互作用可能通过结合STM模式与LTM网络的相互作用来解释θ周期中尖峰密度的不对称分布。

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