Dependence of oriented BN films on Si(100) substrate temperature

H. Zhou; R.Z. Wang; A.P. Huang

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Dependence of oriented BN films on Si(100) substrate temperature

机译：取向BN膜对Si（100）衬底温度的依赖性

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摘要

The effects of substrate temperature (T_sub) of Si(100) on the orientation of hexagonal Boron Nitride (h-BN) films synthesized using magnetron sputtering and Plasma-Enhanced CVD (PECVD) were studied, respectively. It was observed that higher T_sub could result in the growth of (0002) oriented h-BN films and improve the crystallinity of the films, in contrast the films with the c-axis basically parallel tot he surface at lower ones. A tentative explanation on the mechanism of the orientation characteristic is suggested, under the integration of compressive stress due to ion bombardment and desorption from thermal excitation.

机译：研究了Si（100）的衬底温度（T_sub）对利用磁控溅射和等离子增强CVD（PECVD）合成的六方氮化硼（h-BN）薄膜取向的影响。观察到较高的T_sub可以导致（0002）取向的h-BN膜的生长并改善膜的结晶度，相比之下，c轴基本上平行于较低的c-轴的膜。在离子轰击和热激发脱附引起的压缩应力的综合作用下，对取向特性的机理进行了初步解释。

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来源
《Journal of Crystal Growth》 |2002年第2期|p.261-265|共5页
作者
H. Zhou; R.Z. Wang; A.P. Huang;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Desorption; Stresses; Nitrides; Piezoelectric materials;

机译：解吸压力;氮化物;压电材料;

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Dependence of oriented BN films on Si(100) substrate temperature

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