Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle

M.J. da Silva; A.A. Quivy; P.P. Gonzalez-Borrero

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Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle

机译：自组装InAs量子点沿其完整演化周期的原子力显微镜研究

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The evolution of self-assembled InAs quantum dots grown by molecular beam epitaxy on GaAs (001) substrates was investigated as a function of the amount of InAs deposited on the surface. A single highly inhomogeneous sample was intentionally grown, where the thickness of the InAs layer varied in such a way that the InAs islands could be continuously analyzed form nucleation to coalescence, avoiding problems of reproducibility and thickness control that are common when a discrete set of samples is used.

机译：研究了通过分子束外延在GaAs（001）衬底上生长的自组装InAs量子点的演化与表面上沉积的InAs量的关系。有意地生长了一个高度不均匀的单个样品，其中InAs层的厚度以这样的方式变化：可以从成核到聚结不断分析InAs岛，从而避免了重复性问题和厚度控制的问题，这些问题在离散的一组样品中很常见用来。

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来源
《Journal of Crystal Growth》 |2002年第2期|p.19-30|共12页
作者
M.J. da Silva; A.A. Quivy; P.P. Gonzalez-Borrero;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Atomic force microscopy; Molecular beam epitaxy; Semiconducting indium compounds;

机译：原子力显微镜;分子束外延;半导体铟化合物;

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专利

1. Detection of Single-Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic-Force Microscopy [J] . Romain Stomp, Yoichi Miyahara, Sacha Schaer, Physical review letters . 2005,第5期

机译：通过非接触原子力显微镜检测单个InAs量子点中的单电子电荷
2. A transmission electron microscopy study of defects formed through the capping layer of self-assembled InAs/GaAs quantum dot samples [J] . K. Sears, J. Wong-Leung, H. H. Tan, Journal of Applied Physics . 2006,第11期

机译：透射电子显微镜研究通过自组装InAs / GaAs量子点样品的盖层形成的缺陷
3. Kinetics of the evolution of InAs/GaAs quantum dots to quantum rings: A combined x-ray, atomic force microscopy, and photoluminescence study [J] . Vikas Baranwal, Giorgio Biasiol, Stefan Heun, Physical review . 2009,第15期

机译：InAs / GaAs量子点向量子环演化的动力学：结合X射线，原子力显微镜和光致发光研究
4. Study of self-assembled InAs quantum dots on InP nano-templates by low voltage scanning electron microscopy cathodoluminescence [C] . Nadia Lahkak, Dominique Drouin, Jean Beerens, Microscopy Society of America annual meeting;Microscopy Society of Canada annual meeting;Societe de Microscopie du Canada annual meeting;Microbeam Analysis Society annual meeting;International Metallographic Society annual meeting . 2002

机译：低压扫描电子显微镜阴极发光研究InP纳米模板上自组装InAs量子点的研究
5. Atomic force microscopy studies on the electrostatic environment and energy levels of self-assembled quantum dots [D] . Cockins, Lynda Patricia 2010

机译：原子力显微镜研究了自组装量子点的静电环境和能量水平
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Detection of Single-Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic-Force Microscopy [O] . Stomp, Romain, Miyahara, Yoichi, Schaer, Sacha, 2005

机译：通过非接触原子力显微镜检测单个InAs量子点中的单电子电荷

Atomic-force microscopy study of self-assembled InAs quantum dots along their complete evolution cycle

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