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首页> 外文期刊>Journal of Crystal Growth >In situ cleaning of GaN/6H-SiC substrates in NH_3
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In situ cleaning of GaN/6H-SiC substrates in NH_3

机译：NH_3中GaN / 6H-SiC衬底的原位清洗

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摘要

Metalorganic chemical vapor deposition-grown GaN on 6H-SiC substrates were cleaned by annealing in an NH_3 flux. Oxygen contamination was removed by thermal desorption, and carbon removal was facilitated by reaction with NH_3. The GaN(0001) surface after NH_3 beam cleaning at 730 deg.C was smooth with distinct atomic steps. The roughness (0.20 nm RMS) was only slightly greater than that of the untreated substrate (o.17 nm RMS). Carbon and oxygen concentrations were reduced to background levels (～1 at/100) by annealing in an HN_3 flux at 800deg.C. The surface step structure was destroyed by annealing in an NH_3 flux of 4×10~15 cm~-2s~-1 from a seeded supersonic beam; however, annealing in an NH_3 flux of 7×10~15cm~-2s~-1 from a leak valve inhibited surface roughening and produced a relatively smooth surface (0.28 nm RMS) with a /3×/3 30 reconstruction. We infer from the effects of annealing temperature and HN_3 flux that the observed surface roughening is due to GaN decomposition.
机译：通过在NH_3助熔剂中进行退火来清洁6H-SiC衬底上的金属有机化学气相沉积生长的GaN。通过热脱附除去氧气污染，并通过与NH_3反应促进除碳。在730°C的NH_3束清洗后，GaN（0001）表面光滑，具有明显的原子台阶。粗糙度（0.20 nm RMS）仅略大于未处理的基材（o.17 nm RMS）。通过在800°C的HN_3助熔剂中进行退火，碳和氧的浓度降低至背景水平（在100时约为1）。表面台阶结构是通过从种子超声波束中以4×10〜15 cm〜-2s〜-1的NH_3通量进行退火而破坏的。然而，从泄漏阀以7×10〜15cm〜-2s〜-1的NH_3通量进行退火可以抑制表面粗糙化，并产生相对光滑的表面（0.28 nm RMS），具有/ 3×/ 3 30的重构。我们从退火温度和HN_3通量的影响推断出观察到的表面粗糙是由于GaN分解所致。

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