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首页> 外文期刊>Journal of Crystal Growth >(AlGa) As composition profile analysis of trenches overgrown with MOVPE
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(AlGa) As composition profile analysis of trenches overgrown with MOVPE

机译：（AlGa）MOVPE长满的沟槽的成分组成分析

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摘要

In this paper we present an examination of (Al_0.3Ga_0.7)As layers grown by MOVPE at different temperatures over trenches etched into (100) GaAs in [011] direction. On the sidewalls of the trenches, the Al content is reduced compared to planar regions. High-resolution cathodoluminescence (CL) shows that the region with lower Al content is homogeneous along the sidewalls and that the Al content changes abruptly at the change of growth faces. To get information on the growth mechanism GaAs quantum wells are embedded within the (AlGa)As. Their CL emission wavelength is different for the sidewalls and planar regions indicating different thicknesses and thus growth rates. The GaAs growth rates are compared with the (AlGa)As growth rates and the change in Al content on the sidewalls. The Results lead to a contradiction. Therefore, the growth of (AlGa)As over trenches cannot be treated as the sum of its Binary components.
机译：在本文中，我们研究了在[011]方向上蚀刻成（100）GaAs的沟槽上，MOVPE在不同温度下生长的（Al_0.3Ga_0.7）As层。与平面区域相比，在沟槽的侧壁上，Al含量降低了。高分辨率阴极发光（CL）显示，具有较低Al含量的区域沿侧壁是均匀的，并且Al含量随着生长面的变化而突然变化。为了获得有关生长机制的信息，GaAs量子阱嵌入在（AlGa）As中。对于侧壁和平面区域，它们的CL发射波长是不同的，这表示不同的厚度以及因此的增长率。将GaAs生长速率与（AlGa）As生长速率以及侧壁上Al含量的变化进行比较。结果导致矛盾。因此，不能将（AlGa）As在沟槽上的生长视为其二进制分量的总和。

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