The application of Madyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth

Ferenc Riesz; Z.R.Zytkiewicz

首页> 外文期刊>Journal of Crystal Growth >The application of Madyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth

【24h】

The application of Madyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth

机译：Madyoh形貌在外延横向生长的GaAs层研究中的应用

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The surface morphology of GaAs layers grown by epitaxial lateral overgrowth is studied by Makyoh topography. Bending of the individual stripes of the layer are observed and quantified. Various defects related to the imperfections Of the growth are also observed. The results are compared to surface-stylus and X-ray diffraction measurements. The results show that Makyoh technique is a useful tool for simple, fast and routine assessment of such Structures.

机译：通过Makyoh形貌研究了外延横向过生长生长的GaAs层的表面形态。观察并量化该层的各个条纹的弯曲。还观察到与生长缺陷有关的各种缺陷。将结果与表面探针和X射线衍射测量结果进行比较。结果表明，Makyoh技术是简单，快速和常规评估此类结构的有用工具。

著录项

来源
《Journal of Crystal Growth》 |2001年第4期|p.741-746|共6页
作者
Ferenc Riesz; Z.R.Zytkiewicz;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Makyoh topography; Surface morphology; Epitaxial lateral overgrowth;

机译：Makyoh地形;表面形态外延侧向过度生长;

相似文献

外文文献
中文文献
专利

1. Synchrotron X-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth [J] . Rantamaki R., Zytkiewicz Z.R., Dobosz D., Journal of Physics, D. Applied Physics: A Europhysics Journal . 1999,第10a1期

机译：液相外延横向过度生长在GaAs衬底上生长的GaAs层的同步X射线形貌分析
2. Deep-level studies in GaN layers grown by epitaxial lateral overgrowth [J] . In-Hwan Lee, A.Y. Polyakov, N.B. Smimov, Thin Solid Films . 2008,第8期

机译：外延横向过生长生长的GaN层的深层研究
3. Effect of the Surface Morphology of Seed and Mask Layers on InP Grown on Si by Epitaxial Lateral Overgrowth [J] . CARL JUNESAND, CHEN HU, ZHECHAO WANG, Journal of Electronic Materials . 2012,第9期

机译：籽晶和掩膜层表面形态对外延生长Si上InP生长的影响
4. Mask-induced strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth [C] . Z.R. Zytkiewicz, J. Domagala, D. Dobosz Symposium on Epitaxial Growth--Principles and Applications held April 5-8, 1999, San Francisco, California, U.S.A. . 1999

机译：液相外延横向过生长在GaAs层中的掩模诱导应变
5. A Study of Molecular Beam Epitaxially Grown GaAsSb (N) Nanowires for Infrared Photodetector Applications [D] . Sharma, Manish. 2018

机译：用于红外光电探测器应用的分子束外延生长的Gaassb（n）纳米线的研究
6. Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed [O] . Charles Renard, Timothée Molière, Nikolay Cherkashin, -1

机译：勘误：纳米种子在隧道氧化物上无缺陷的外延横向过生长而产生的高电流密度GaAs / Si整流异质结
7. Liquid-phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light-emitting diodes [O] . CHEN CW 2012

机译：在GaAsP衬底上生长的InGaAsP层的液相外延生长和表征，用于橙色发光二极管
8. Low-Dislocation-Density GaAs Epilayers Grown on Ge-Coated Si Substrates by Means of Lateral Epitaxial Overgrowth. [R] . Tsaur, B. Y., McClelland, R. W., Fan, J. C. C., 1982

机译：通过横向外延过度生长在Ge涂层si衬底上生长的低位错密度Gaas外延层。

The application of Madyoh topography for the study of GaAs layers grown by epitaxial lateral overgrowth

摘要

著录项

相似文献

相关主题

期刊订阅