Dopant distribution in selectively regrown InP: Fe studied by time-resolved photoluminescence

a.Gaarder; S.Marcinkevicius; E.Rodriguez Messmer

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Dopant distribution in selectively regrown InP: Fe studied by time-resolved photoluminescence

机译：通过时间分辨光致发光研究选择性再生InP：Fe中的杂质分布

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We apply time-resolved photoluminescence with 1 μm spatial resolution for the characterization fo iron distribution in semi-insulating InP:Fe epitaxial layers regrown by hydride vapor-phase epitaxy around etched mesas. The InP:Fe regrowth was carried out on InP:S mesas etched both along the [110] and [110] crystallographic directions, as well as on InP/InGaAsP in-plane lasers. In all cases, the Fe concentration was found to be close to the target values and showed little variation along the regrown layers.

机译：我们将具有1μm空间分辨率的时间分辨光致发光用于刻蚀台面周围氢化物气相外延生长的半绝缘InP：Fe外延层中的铁分布特征。在沿[110]和[110]晶体学方向蚀刻的InP：S台面以及InP / InGaAsP平面激光器上进行了InP：Fe的再生。在所有情况下，发现Fe浓度均接近目标值，并且沿再生长层几乎没有变化。

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来源
《Journal of Crystal Growth》 |2001年第4期|p.451-457|共7页
作者
a.Gaarder; S.Marcinkevicius; E.Rodriguez Messmer;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Time-resolved photoluminescence; A1.Computer simulation; A3.Hydride vapor phase epitaxy selective regrowth;

机译：A1。时间分辨的光致发光;A1。计算机仿真;A3。氢化物气相外延选择性再生长;

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1. Time-resolved micro-photoluminescence studies of dopant distribution in selectively regrown GalnP : Fe around VCSELs [J] . Gaarder A., Marcinkevicius S., Barrios CA., Physica Scripta: An International Journal for Experimental and Theoretical Physics . 2002,第0期

机译：VCSEL周围选择性再生的GalnP：Fe中掺杂物分布的时间分辨微光致发光研究
2. Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques [J] . T. Koida, A. Uedono, A. Tsukazaki, Physica Status Solidi. C, Conferences and critical reviews . 2004,第10期

机译：通过时间分辨光致发光和慢正电子an灭技术研究的ZnO外延层中光致发光寿命和缺陷密度的直接比较
3. Direct comparison of photoluminescence lifetime and defect densities in ZnO epilayers studied by time-resolved photoluminescence and slow positron annihilation techniques [J] . Koida T, Uedono A, Tsukazaki A, Physica Status Solidi. A, Applied Research . 2004,第12期

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4. Dopant distribution in selectively regrown InP:Fe and InGaP:Fe studied by time-resolved photoluminescence [C] . Gaarder, A., Angulo Barrios, Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on . 2000

机译：通过时间分辨光致发光研究选择性再生的InP：Fe和InGaP：Fe中的杂质分布
5. Photoluminescence, magneto-photoluminescence and time-resolved photoluminescence studies of indium antimonide. [D] . Grober, Robert David. 1991

机译：锑化铟的光致发光，磁光致发光和时间分辨光致发光研究。
6. Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence [O] . Yao Xing, Degang Zhao, Desheng Jiang, 2019

机译：用光致发光研究InGaN / GaN量子阱中两种局部状态之间的载流子重分布
7. Multi-peak photoluminescence in ZnO nanocrystals studied by time-resolved and spatially-resolved photoluminescence spectroscopies [O] . Yamamoto Aishi, Taguchi Yuko, Satake Yasuhiko, 2011

机译：通过时间分辨和空间分辨光致发光光谱学研究ZnO纳米晶体中的多峰光致发光
8. Etude des Surfaces d'InP et des Interfaces InP Isolant Par Photoluminescence (Photoluminescence Study of InP Surfaces and InP-Insulator Interfaces) [R] . Bourdoucen, H. 1987

机译：Etude des surfaces d'Inp et des Interfaces Inp Isolant par photoluminescence（Inp表面和Inp绝缘体界面的光致发光研究）

Dopant distribution in selectively regrown InP: Fe studied by time-resolved photoluminescence

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