Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication

T.Ogura; D.Kishimoto; T.Nishinaga

首页> 外文期刊>Journal of Crystal Growth >Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication

【24h】

Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication

机译：砷对脊结构制造GaAs MBE表面间扩散的影响

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The faceting and the shrinkage processes of ridge structure fabricated along [110] on GaAs (001) substrate with As_2 flux and As_4 flux were monitored by microprobe reflection high-energy electron diffraction/scanning electron microscopy (microprobe-RHEED/SEM) installed in the MBE chamber.

机译：在GaAs（001）衬底上以As_2助熔剂和As_4助熔剂沿[110]制作的脊结构的刻面和收缩过程通过安装在硅片上的微探针反射高能电子衍射/扫描电子显微镜（microprobe-RHEED / SEM）进行监测。 MBE室。

著录项

来源
《Journal of Crystal Growth》 |2001年第3期|p.179-184|共6页
作者
T.Ogura; D.Kishimoto; T.Nishinaga;
展开▼
作者单位

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A1.Diffusion; A3.Molecular beam epitaxy; B1.Gallium compounds; B2.Semiconducting gallium arsenide;

机译：A1。扩散;A3。分子束外延;B1。镓化合物;B2。半导体砷化镓;

相似文献

外文文献
中文文献
专利

1. Arsenic pressure dependence of incorporation diffusion length on (0 0 1) and (1 1 0) surfaces and inter-surface diffusion in MBE of GaAs [J] . A. Yamashiki, T. Nishinaga Journal of Crystal Growth . 1999,第2期

机译：GaAs的（0 0 1）和（1 1 0）表面上掺入扩散长度的砷压力依赖性以及MBE中的表面间扩散
2. INTER-SURFACE DIFFUSION OF GA ON GAAS NON-PLANAR SUBSTRATE AND ITS REAL TIME CONTROL BY MICROPROBE-RHEED/SEM MBE [J] . Yamashiki A., Nishinaga T. Crystal Research and Technology: Journal of Experimental and Industrial Crystallography . 1997,第8期

机译：GA在GAAS非平面基质上的界面间扩散及其通过微探针/ SEM MBE的实时控制
3. Fabrication of InGaAs ridge quantum structures grown by selective MBE and their device applications [J] . T. Muranaka, A. Ito, C. Jiang, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2000,第643期

机译：选择性MBE生长的InGaAs脊量子结构的制备及其器件应用
4. Atomic hydrogen assisted selective MBE growth of InGaAs ridge quantum wire honeycomb network structures for binary-decision diagram quantum LSIs [C] . Ito, A., Muranaka, Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On . 2001

机译：用于二元决策图量子LSI的原子氢辅助InGaAs脊量子线蜂窝网络结构的选择性MBE生长
5. Investigation of the Effects of Rapid Thermal Annealing on MBE Grown GaAsBi/GaAs Heterostructures for Optoelectronic Devices. [D] . Grant, Perry C. 2013

机译：快速热退火对MBE生长的光电器件GaAsBi / GaAs异质结构影响的研究。
6. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs [O] . Yuri G. Sadofyev, Nigamananda Samal 2010

机译：MBE在GaAs上生长的应变GaAsSb / GaAs QW结构的光致发光和能带排列
7. Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers [O] . D. Cenghera, Z. Hatzopoulosa, S. Gallisa, 2015

机译：使用mBE生长的Gaas晶片与si晶片的低温键合在si上制造Gaas激光二极管
8. Fabrication of Laterally Coupled Distributed Feedback Laser Structures by Two Step RIE in InGaAsSb-AlGaAsSb Material System Grown by MBE [R] . Sin, Y., Bicknell-Tassius, R., Muller, R., 2000

机译：mBE生长的InGaassb-alGaassb材料系统中两步RIE制备横向耦合分布反馈激光器结构

Effect of As molecular species on inter-surface diffusion in GaAs MBE for ridge structure fabrication

摘要

著录项

相似文献

相关主题

期刊订阅