Growth of GaN nanowires by direct reaction of Ga with NH_3

Maoqi He; Peizhen; S.Noor Mohammadm

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Growth of GaN nanowires by direct reaction of Ga with NH_3

机译：Ga与NH_3直接反应生长GaN纳米线

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Semiconducting, single crystal wurtzite GaN nanowires have been grown by direct reaction of metal Ga with NH_3 in a tube furnace. Thi paper discusses the growth mechanism. Nanowires grow only between 825deg.C and 925deg.C. Their diameters vary between 20 and 150 nm and depend directly on temperature and NH_3 flow rate.

机译：通过在管式炉中使金属Ga与NH_3直接反应来生长半导体单晶纤锌矿GaN纳米线。这篇论文讨论了增长机制。纳米线仅在825°C至925°C之间生长。它们的直径在20至150 nm之间变化，并且直接取决于温度和NH_3流速。

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来源
《Journal of Crystal Growth》 |2001年第3期|p.357-365|共9页
作者
Maoqi He; Peizhen; S.Noor Mohammadm;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3.Chemical vapor deposition processes; B1.Gallium compounds; B1.Nitrides;

机译：A3。化学气相沉积工艺;B1。镓化合物;B1氮化物;

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机译：通过Ga与NH_3和H_2的反应在Au / Si（0 0 1）上氢化物辅助生长GaN纳米线
2. Growth of Mg-doped GaN micro-crystals using MgCl_2 in direct reaction of Ga and NH_3 [J] . S.H. Lee, S.H. Ahn, K.C. Kim, Journal of Crystal Growth . 2003,第3a4期

机译：MgCl_2在Ga和NH_3直接反应中生长Mg掺杂的GaN微晶
3. Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH_3/H_2 System: A Computational Fluid Dynamics Simulation Study [J] . Akira HIRAKO, Kazuhide KUSAKABE, Kazuhiro OHKAWA Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2005,第2期

机译：使用TMGa / NH_3 / H_2系统对金属有机气相外延生长GaN的反应途径进行建模：计算流体动力学模拟研究
4. Direct Synthesis of Gan Nanowires with Control on Growth Directions [C] . Hongwei Li, Mahendra K. Sunkara, Alan Chin International Symposium on Runaway Reactions, Pressure Relief Design and Effluent Handling American Institute of Chemical Engineers/American Chemical Society Management Conference . 2005

机译：直接合成GaN纳米线，控制增长方向
5. Characterization and Modeling of Electrical Response of Electrode Catalyzed Reactions in AIGaN/GaN-Based Gas Sensors. [D] . Melby, Jacob H. 2013

机译：AIGaN / GaN基气体传感器中电极催化反应的电响应的表征和建模。
6. Direct Growth of Single Crystalline GaN Nanowires on Indium Tin Oxide-Coated Silica [O] . Aditya Prabaswara, Jung-Wook Min, Ram Chandra Subedi, 2019

机译：铟锡氧化物涂层二氧化硅上单晶GaN纳米线的直接生长
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机译：在氧化铟锡涂覆二氧化硅上的单晶GaN纳米线的直接生长
8. Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia. [R] . Jacobs, R. N., Salamamca-Riba, L., He, M., 2001

机译：Ga蒸气与氨直接反应制备GaN纳米线的结构表征。

Growth of GaN nanowires by direct reaction of Ga with NH_3

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