Direct observation of LPE heterogrowth of GaAs on a GaP substrate

Akira Tanaka; Naoki Izumi; Masakazu Kimura; Tokuzo Sukegawa

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Direct observation of LPE heterogrowth of GaAs on a GaP substrate

机译：在GaP衬底上直接观察GaAs的LPE异质生长

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摘要

In order to observe the early stage of GaAs growth on a GaP substrate, a liquid-phase epitaxial (LPE) growth system with a long distance microscope was constructed. Successive photographs of growing GaAs islands within 3 min after starting the growth are presented.

机译：为了观察GaP在GaP衬底上生长的早期阶段，构建了具有长距离显微镜的液相外延（LPE）生长系统。展示了开始生长后3分钟内生长的GaAs岛的连续照片。

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来源
《Journal of Crystal Growth》 |2000年第4期|p.33-36|共4页
作者
Akira Tanaka; Naoki Izumi; Masakazu Kimura; Tokuzo Sukegawa;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
direct observation; liquid-phase epitaxy; hetero-epitaxy; gallium arsenide; gallium phosphide;

机译：直接观察液相外延异质外延砷化镓磷化镓;

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专利

1. LPE growth and properties of GaP‐ (AlGa)As‐GaAs heterostructures as a function of the GaP substrate roughness [J] . Journal of Applied Physics . 1975,第5期

机译：LPE的生长和GaP-（AlGa）As-GaAs异质结构的性质与GaP衬底粗糙度的关系
2. Comparative study of the photoluminescence of InGaP layers grown on GaAs substrates by LPE and MOVPE techniques [J] . Tatiana Prutskij, Claudio Pelosi, Raul A. Brito-Orta Microelectronics journal . 2005,第3a6期

机译：通过LPE和MOVPE技术在GaAs衬底上生长的InGaP层的光致发光的比较研究
3. Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE technique [J] . Prutskij T, Diaz-Arencibia P, Silva-Andrade F, Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2004,第0期

机译：通过LPE技术在GaAs衬底上生长的InGaP层的结构和光学特性
4. Observation of using laser direct writing to fabricate nano-grooves on GaAs substrate [C] . Siyi Zhuang, Wei Zhang, Xinning Yang, Conference on advanced laser processing and manufacturing . 2020

机译：使用激光直接写入制造GaAs衬底纳米槽的观察
5. Strain-balanced InGaP/InGaP multiple quantum well electroabsorption modulators on GaP and GaAsP. [D] . Vogt, Timothy Jon. 1997

机译：GaP和GaAsP上的应变平衡InGaP / InGaP多量子阱电吸收调制器。
6. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate [O] . Bilel Azeza, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, 2015

机译：硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
7. Direct observation of two-dimensional lattice mismatch parallel to the interfacial boundary between the LPE Ga0.65Al0.35As layer and the GaAs substrate [O] . Shih-Lin Chang 2011

机译：直接观察平行于LPE Ga0.65Al0.35As层和GaAs衬底之间界面边界的二维晶格失配

Direct observation of LPE heterogrowth of GaAs on a GaP substrate

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