Characterization of Ga_(0.52)In_(0.48)P/GraAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy

S.F. Yoon; P.Y. Lui; H.Q. Zheng

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Characterization of Ga_(0.52)In_(0.48)P/GraAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy

机译：固体源分子束外延生长的Ga_（0.52）In_（0.48）P / GraAs单量子阱结构的深层瞬态光谱表征

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A GaInP/GaAs/GaInP single quantum well (SQW) sample with unintentionally doped barrier layers was studied using deep level transient spectroscopy (DLTS). A significant DLTS signal was observed, and believed to be from the thermal emission of the well electrons in the quantum well. Furthermore, it was found that only a single major peak was observed, thus indicating that the GaInP/GaAs/GaInP SQW should be at the single-trap level state. Different combinations of V_r (reverse bias) and fill pulse height (FPH) allowed a DLTS study of the region before, within, and beyond the well location. Such an observation, considering the use of an undoped GaInP barrier layer, proves that the DLTS signal is indeed from the well because it is only significant when probed within the well region. The assumption of the DX centers in some previous studies involving the use of AlGaAs barriers can be excluded.

机译：使用深层瞬态光谱法（DLTS）研究了具有无意掺杂的势垒层的GaInP / GaAs / GaInP单量子阱（SQW）样品。观察到了重要的DLTS信号，并且认为该信号是来自量子阱中阱电子的热发射。此外，发现仅观察到一个主峰，因此表明GaInP / GaAs / GaInP SQW应该处于单阱水平状态。 V_r（反向偏置）和填充脉冲高度（FPH）的不同组合允许对井位置之前，之内和之外的区域进行DLTS研究。考虑到使用未掺杂的GaInP势垒层，这样的观察证明了DLTS信号确实来自阱，因为只有在阱区域内探测时，DLTS信号才有意义。可以排除先前在某些涉及使用AlGaAs势垒的研究中DX中心的假设。

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《Journal of Crystal Growth》 |2000年第2期|p.49-55|共7页
作者
S.F. Yoon; P.Y. Lui; H.Q. Zheng;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
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1. Isotropic interface roughness of pseudomorphic In_(0.74)Ga_(0.26)As/ In_(0.52)Al_(0.48)As quantum wells grown on (411)A InP substrates by molecular beam epitaxy [J] . T. Kitada, S. Kusuonki, M. Kinouchi, Physica status solidi . 2008,第9期

机译：通过分子束外延生长在（411）A InP衬底上生长的准晶态In_（0.74）Ga_（0.26）As / In_（0.52）Al_（0.48）As量子阱的各向同性界面粗糙度
2. Improved uniformity of self-organized In_(0.53)Ga_(0.47)As/ In_(0.52)Al_(0.48)As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy [J] . Yasuhide Ohno, Satoshi Shimomura, Satoshi Hiyamizu Journal of Crystal Growth . 2003,第1a4期

机译：通过分子束外延生长在（775）B取向InP衬底上生长的自组织In_（0.53）Ga_（0.47）As / In_（0.52）Al_（0.48）As量子线的均匀性得到改善
3. Temperature dependence of photoluminescence oxygen-related deep level: in Al_(0.2) Ga_(0.3)In_(0.5)P: Be grown by solid source molecular beam epitaxy [J] . C. Soubervielle-Montalvo, V. Mishournyi, I. C. Hernandez, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2008,第3期

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4. 1.5 μm Range Self-Organized In_(0.65)Ga_(0.35)As/In_(0.52)Al_(0.48)As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy [C] . K. Hyodo, Y. Ohno, H. Kanamori, Materials Research Society Symposium . 2003

机译：1.5μm范围自组织IN_（0.65）GA_（0.35）AS / IN_（0.52）AL_（0.48），作为通过分子束外延在（775）面向的INP基材上生长的量子线结构
5. Modelling, Design, Growth and Characterization of Strain Balanced Quantum Cascade Lasers (3-11mum), grown by Gas Source Molecular Beam Epitaxy. [D] . Bandyopadhyay, Neelanjan. 2015

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7. Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures [O] . Lin, Yiping, Koga, Takaaki, Nitta, Junsaku 2005

机译：InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响
8. Low Frequency and Microwave Characterization of Submicron-Gate In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Heterojunction Metal-Semiconductor Field-Effect Transistors Grown by Molecular-Beam Epitaxy. [R] . Eastman, L. F., Kuang, J. B., Tasker, P. J., 1989

机译：亚微米栅极In（0.52）al（0.48）as / In（0.53）Ga（0.47）as / In（0.52）al（0.48）的低频和微波表征作为分子生长的异质结金属半导体场效应晶体管光束外延。

Characterization of Ga_(0.52)In_(0.48)P/GraAs single quantum well structures grown by solid source molecular beam epitaxy using deep level transient spectroscopy

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