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首页> 外文期刊>Journal of Crystal Growth >Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy
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Growth of self-organized InAs quantum dots on InP by solid-source molecular beam epitaxy

机译：固体源分子束外延在InP上生长自组织InAs量子点

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Self-organized InAs quantum dots (QDs) on InP (100) substrate have been prepared by solid-source molecular-beam epitaxy (SSMBE). Atomic force microscopy (AFM) examination shows that the InAs QDs possess low aspect ratio (1:17) of height vs. diameter. The low-temperature photoluminescence (PL) behavior of the QDs is characterized by a 65 meV PL linewidth at ～ 0.8 eV, with three other emissions, which correspond to the various thicknesses of InAs wetting layers. It is deduced that the InAs wetting layers exceeded the intended InAs deposition, which is attributed to unintentional As/P exchange reaction. This excess material is further confirmed by XRD measurements, and indicates that effective exchange occurs even at low temperature (500℃) for SSMBE growth. No significant change in the QD emission peak is observed in the sample grown at high temperature, indicating the absence of any significant As/P exchange reaction in the QDs.
机译：InP（100）衬底上的自组织InAs量子点（QDs）已通过固源分子束外延（SSMBE）制备。原子力显微镜（AFM）检查显示InAs量子点具有高度与直径的低长宽比（1:17）。 QD的低温光致发光（PL）行为的特征是在〜0.8 eV处具有65 meV的PL线宽，并具有其他三种发射，分别对应于InAs湿润层的各种厚度。推论出InAs润湿层超过了预期的InAs沉积，这归因于无意的As / P交换反应。通过XRD测量进一步证实了这种过量的物质，表明即使在低温（500℃）下，对于SSMBE的生长也可以进行有效的交换。在高温下生长的样品中未观察到QD发射峰的显着变化，表明QD中不存在任何显着的As / P交换反应。

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