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首页> 外文期刊>Journal of Crystal Growth >Characterization of 4 in VGF-GaAs single crystals grown in a heater-magnet module
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Characterization of 4 in VGF-GaAs single crystals grown in a heater-magnet module

机译：加热磁铁模块中生长的VGF-GaAs单晶中的4种晶体的表征

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Silicon-doped 4 inVGF-GaAs single crystals were grown under the influence of traveling magnetic fields (TMF). A KRISTMAG~® heater-magnet module (HMM) was used for the simultaneous generation of heat and TMF through a combination of DC and AC control. In this study, we investigated changing structural and electronical properties as well as micro- and macrosegregation of VGF-GaAs single crystals grown with applied TMF. Striations were observed in crystals grown without or too strong TMF. Almost no micro-inhomogeneities were detected when the magnetic flux densities of the TMF were matched to progression of solidification. With utilized TMF, induced melt flow opposed natural convection driven by buoyancy forces. Axial dopant incorporation was enhanced through a reduction of flow velocities and converging melt flow towards the center of the solid-liquid interface. The radial segregation profiles were flattened through a reduction of the concave deflection. While low frequency TMF bended the interface center more convex, the effect of high frequency TMF was more limited to the melt periphery. Furthermore, with large high frequency TMF current shares the impact of the minor three-dimensional asymmetric magnetic field distribution in the HMM became more relevant. Consequently, the application of double-frequency TMF led to a reduction of etch pit density through reduction of interface concavity.
机译：硅掺杂的4 inVGF-GaAs单晶在行进磁场（TMF）的影响下生长。 KRISTMAG®加热器-磁铁模块（HMM）用于通过直流和交流控制的组合同时产生热量和TMF。在这项研究中，我们研究了使用TMF生长的VGF-GaAs单晶的变化的结构和电子特性以及微观和宏观偏析。在没有或过强的TMF的晶体中观察到条纹。当TMF的磁通密度与凝固过程相匹配时，几乎没有检测到微观不均匀性。利用利用的TMF，感应的熔体流动与浮力驱动的自然对流相对。通过降低流速并使熔体流向固液界面中心汇聚，可以增强轴向掺杂剂的掺入。通过减小凹偏角使径向偏析轮廓变平。低频TMF使界面中心弯曲得更凸，而高频TMF的作用更多地局限于熔体外围。此外，在高频高频TMF电流共享的情况下，HMM中较小的三维非对称磁场分布的影响变得更加重要。因此，双频TMF的应用导致界面凹度的降低，从而导致蚀刻坑密度的降低。

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