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Numerical modeling of CdTe crystallization from Te solution under terrestrial and microgravity conditions

机译:地面和微重力条件下Te溶液中CdTe结晶的数值模拟

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Numerical modeling is used to investigate CdTe crystallization by Traveling Solution Growth (TSG) technique under terrestrial and microgravity conditions. Numerical results are compared to some experimental observations on CdTe growth by a TSG seeded process under ground conditions. It is found that the instability of the growth interface is related to the compositional non-uniformities of the liquid zone near the solidification front, caused by the species convective transport from the dissolution interface to the growth interface. The modeling of the ground experiment shows a large liquid zone (approx. 5 cm) after the dissolution of CdTe feed material into tellurium. The convection is characterized by a two-cell pattern. The vortex located near the dissolution interface mixes the solute in this region, reducing the tellurium transport to the growth interface. The interface is more stable in this case, but the dopant (indium) distribution is not homogeneous in the solidified sample. Numerical simulations performed by reducing the length of the liquid zone (approx. 2.5 cm) show one single vortex which is extended in the whole melt volume. The intense convection accelerates the tellurium transport to the growth interface, which is destabilized. In order to avoid the morphological destabilization of the growth interface, crucible rotation at constant speed can be applied. In this case, the homogeneity of dopant distribution in the solidified ingots is significantly improved. The modeling of CdTe crystallization under microgravity conditions shows favorable conditions for the growth with a stable interface in the absence of the convection.
机译:在地面和微重力条件下,采用数值模型研究了通过旅行溶液生长(TSG)技术进行的CdTe结晶。将数值结果与在地面条件下通过TSG种子工艺对CdTe生长的一些实验观察结果进行了比较。发现生长界面的不稳定性与凝固前沿附近液体区域的组成不均匀性有关,这是由于物质从溶解界面到生长界面的对流传输所致。地面实验的模型显示,在CdTe进料溶解到碲中之后,液体区域较大(约5厘米)。对流的特征是两室模式。位于溶解界面附近的涡流在该区域混合了溶质,从而减少了碲向生长界面的传输。在这种情况下,界面更稳定,但是在固化的样品中,掺杂剂(铟)的分布不均匀。通过减少液体区域的长度(约2.5厘米)进行的数值模拟显示了一个单一的涡旋,该涡旋在整个熔体体积中扩展。强烈的对流会加速碲迁移至不稳定的生长界面。为了避免生长界面的形态不稳定,可以应用恒定速度的坩埚旋转。在这种情况下,固化锭中掺杂剂分布的均匀性得到显着改善。在微重力条件下CdTe结晶的模型显示了在不存在对流的情况下具有稳定界面生长的有利条件。

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