Density functional study of GaN(0001)/AlN(0001) high electron mobility transistor structures

Jakub Soltys; Maria Ptasinska; Jacek Piechota; Stanislaw Krukowski

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Density functional study of GaN(0001)/AlN(0001) high electron mobility transistor structures

机译：GaN（0001）/ AlN（0001）高电子迁移率晶体管结构的密度泛函研究

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AlN/GaN high electron mobility transistor (HEMT) structures were theoretically investigated using the density functional theory (DFT). An existence of two-dimensional electron gas (2DEG), generated by strong polarization fields at the AlN/GaN interface, was confirmed by ab initio calculations. The potential profiles were analyzed for the HEMTs with different number of AlN layers, indicating that very thin AlN barrier could not provide a high density of carriers and good confinement of 2DEG. It was shown that for six AlN layers (thickness about 13 A), no electron gas is present as shown by the potential profile. In the investigated electronic structure, the band states associated with the two-dimensional electron gas were identified. It was shown that for a thicker AlN barrier, the occupancy of this states is higher, that is consistent with the experimental data (Dabiran et al., Appl. Phys. Lett. 93 (2008) 082111).

机译：使用密度泛函理论（DFT）从理论上研究了AlN / GaN高电子迁移率晶体管（HEMT）结构。通过从头算计算，确认了在AlN / GaN界面处由强极化场产生的二维电子气（2DEG）的存在。分析了具有不同数量AlN层的HEMT的势能曲线，表明非常薄的AlN势垒无法提供高载流子密度和2DEG的良好约束。结果表明，对于六个AlN层（厚度约为13 A），如电位分布所示，不存在电子气。在研究的电子结构中，确定了与二维电子气有关的能带状态。已经表明，对于更厚的AlN势垒，该状态的占有率更高，这与实验数据一致（Dabiran等人，Appl.Phys.Lett.93（2008）082111）。

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来源
《Journal of Crystal Growth》 |2014年第1期|30-32|共3页
作者
Jakub Soltys; Maria Ptasinska; Jacek Piechota; Stanislaw Krukowski;
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作者单位

Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland;

Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland;

Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland;

Interdisciplinary Centre for Mathematical and Computational Modelling, University of Warsaw, Pawinskiego 5a, 02-106 Warsaw, Poland,Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
B1. Nitrides; B2. Semiconducting Ⅲ-Ⅴ materials; B3. Field effect transistors;

机译：B1。氮化物;B2。半导体Ⅲ-Ⅴ材料;B3。场效应晶体管;

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1. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates [J] . Ahmadi Elaheh, Wu Feng, Li Haoran, Semiconductor science and technology . 2015,第5期

机译：N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构，通过等离子体辅助分子束外延在邻近衬底上生长
2. Effects of Floating Gate Structures on the Two-Dimensional Electron Gas Density and Electron Mobility in AlGaN/AlN/GaN Heterostructure Field-Effect Transistors [J] . Zhao Jingtao, Zhao Zhenguo, Chen Zidong, Journal of the Korean Physical Society . 2017,第12期

机译：浮栅结构对AlGaN / AlN / GaN异质结构场效应晶体管中二维电子气体密度和电子迁移率的影响
3. Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer [J] . A. Bairamis, Ch. Zervos, A. Adikimenakis, Applied Physics Letters . 2014,第11期

机译：具有薄GaN / AlN缓冲层的AlN / GaN高电子迁移率晶体管的电子密度和电流
4. Density functional calculations of the binding energies and adatom diffusion on strained AlN (0001) and GaN (0001) surfaces [C] . Vibhu Jindal, James Grandusky, Neeraj Tripathi, MRS fall meeting . 2008

机译：在应变AlN（0001）和GaN（0001）表面上的结合能和原子扩散的密度泛函计算
5. Reliability study of AlGaN/GaN high electron mobility transistor by thermal simulation and sub-bandgap optical pumping [D] . Kang, Tsung-Sheng. 2015

机译：Algan / GaN高电子迁移率晶体管通过热仿真和子带隙光学泵浦的可靠性研究
6. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study [O] . Andrian V. Kuchuk, Serhii Kryvyi, Petro M. Lytvyn, 2016

机译：在原始GaN（0001）衬底上生长的GaN / AlN超晶格中应变弛豫的特殊性：XRD和AFM的比较研究
7. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study [O] . Andrian V. Kuchuk, Serhii Kryvyi, Petro M. Lytvyn, 2016

机译：在原始GaN（0001）衬底上生长的GaN / AlN超晶格中应变弛豫的特殊性：XRD和AFM的比较研究

Density functional study of GaN(0001)/AlN(0001) high electron mobility transistor structures

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